Electronic Components Datasheet Search
  English  ▼

Delete All
ON OFF
ALLDATASHEET.COM

X  

Preview PDF Download HTML

NTE21256 Datasheet(PDF) 4 Page - NTE Electronics

Part No. NTE21256
Description  262,144-Bit Dynamic Random Access Memory (DRAM)
Download  6 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  NTE [NTE Electronics]
Direct Link  http://www.nteinc.com
Logo NTE - NTE Electronics

NTE21256 Datasheet(HTML) 4 Page - NTE Electronics

  NTE21256 Datasheet HTML 1Page - NTE Electronics NTE21256 Datasheet HTML 2Page - NTE Electronics NTE21256 Datasheet HTML 3Page - NTE Electronics NTE21256 Datasheet HTML 4Page - NTE Electronics NTE21256 Datasheet HTML 5Page - NTE Electronics NTE21256 Datasheet HTML 6Page - NTE Electronics  
Zoom Inzoom in Zoom Outzoom out
 4 / 6 page
background image
AC Characteristics: (TA = 0° to +70°C, VCC = 5V ±10%, Note 9, Note 10, Note 11 unless
otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Random Read or Write Cycle Time
tRC
Note 12
260
ns
Read–Modify–Write Cycle Time
tRWC
Note 12
310
ns
Access Time from RAS
tRAC
Notes 13, Note 14
150
ns
Access Time from CAS
tCAC
Notes 13, Note 15
75
ns
RAS Pulse Width
tRAS
150
104
ns
CAS Pulse Width
tCAS
75
ns
Refresh Period
tREF
4
ms
RAS Precharge Time
tRP
100
ns
CAS to RAS Precharge Time
tCRP
0
ns
RAS to CAS Delay Time
tRCD
Note 16
30
75
ns
RAS Hold Time
tRSH
75
ns
CAS Hold Time
tCSH
150
ns
Row Address Setup Time
tASR
0
ns
Row Address Hold Time
tRAH
20
ns
Column Address Setup Time
tASC
0
ns
Column Address Hold Time
tCAH
30
ns
Column Address Hold Time referenced to RAS
tAR
Note 17
105
ns
Transition Time (Rise and Fall)
tT
Note 9
3
50
ns
Read Command Setup Time
tRCS
0
ns
Read Command Hold Time referenced to CAS
tRCH
Note 18
0
ns
Read Command Hold Time referenced to RAS
tRRH
Note 18
10
ns
Output Buffer Turn–Off Delay
tOFF
Note 19
0
40
ns
Note 9. VIH and VIL are reference levels to measure timing of input signals. Also, transition times
are measured between VIH and VIL.
Note10. An initial pause of 200
µs is required after power–up followed by a minimum of eight initialization
cycles prior to normal operation.
Note 11. The time parameters specified here are valid for a transition time of tT = 5ns for the input signals
Note12. The specification for tRC (Min), tRWC (Min), and page–mode cycle time (tPC) are only used
to indicate cycle time at which proper operation over full temperature range
(0
°C ≤ TA ≤ +70°C) is assured.
Note13. Measured with a load equivalent to two TTL loads and 100pf.
Note14. Assumes that tRCD ≤ tRCD (Max). If tRCD is greater than the maximum recommended value
shown in this table, tRAC will increase by the amount that tRCD exceeds the value shown.
Note15. Assumes that tRCD ≤ tRCD (Max).
Note16. Operation within the tRCD (Max) limit ensures that tRAC (Max) can be met. tRCD (Max) is spe-
cified as a reference point only. If tRCD is greater than the specified tRCD (Max) limit, then
access time is controlled exclusively by tCAC.
Note17. tRCD + tCAH ≥ tAR Min, tRCD + tDH ≥ tDHR Min, tRCD + tWCH ≥ tWCR Min.
Note18. Either tRRH or tRCH must be satisfied for a read cycle.
Note19. tOFF (Max) defines the time at which the output achieves the open circuit condition and is not
referenced to output voltage levels.


Html Pages

1  2  3  4  5  6 


Datasheet Download

Go To PDF Page

Related Electronics Part Number

Part No.DescriptionHtml ViewManufacturer
HM514260C 262 144-word x 16-bit Dynamic Random Access Memory 1  2  3  4  5  More Hitachi Semiconductor
MB81464-12 MOS 262 144 BIT DYNAMIC RANDOM ACCESS MEMORY 1  2  3  4  5  More Fujitsu Component Limited.
HM514260A 262 144-Word x 16-Bit Dynamic Random Access Memory 1  2  3  4  5  More Hitachi Semiconductor
MCM40512 512K x 40 Bit Dynamic Random Access Memory Module 1  2  3  4  5  More Motorola, Inc
MCM4116 16 384 BIT DYNAMIC RANDOM ACCESS MEMORY 1  2  3  4  5  More Motorola, Inc
SMJ4256 262 144-BIT DYNAMIC RANDOM-ACCESS MEMORY 1  2  3  4  5  More Texas Instruments
HM514400B 1 048 576-word X 4-bit Dynamic Random Access Memory 1  2  3  4  5  More Hitachi Semiconductor
MCM32100 1M x 32 Bit Dynamic Random Access Memory Module 1  2  3  4  5  More Motorola, Inc
HM5117400B 4194304-WORD X 4-BIT DYNAMIC RANDOM ACCESS MEMORY 1  2  3  4  5  More Hitachi Semiconductor

Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn