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NTE2114 Datasheet(PDF) 1 Page - NTE Electronics

Part No. NTE2114
Description  Integrated Circuit MOS, Static 4K RAM, 300ns
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Manufacturer  NTE [NTE Electronics]
Direct Link  http://www.nteinc.com
Logo NTE - NTE Electronics

NTE2114 Datasheet(HTML) 1 Page - NTE Electronics

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NTE2114
Integrated Circuit
MOS, Static 4K RAM, 300ns
Description:
The NTE2114 1024–word 4–bit static random access memory is fabricated using N–channel silicon–
gate technology. All internal circuits are fully static and therefore require no clocks or refreshing for
operation. The data is read out nondestructively and has the same polarity as the input data. Com-
mon input/output pins are provided.
The separate chip select input (CS) allows easy memory expansion by OR–tying individual devices
to a data bus.
Features
D All Inputs and Outputs Directly TTL Compatible
D Static Operation: No Clocks or Refreshing Required
D Low Power: 225mW Typ
D High Speed: Down to 300ns Access Time
D TRI–STATE Output for Bus interface
D Common Data In and Data Out Pins
D Single 5V Supply
D Standard 18–Lead DIP Package
Absolute Maximum Ratings:
Voltage at Any Pin
–0.5V to +7V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation, PD
1W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg
–65
° to +150°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 10sec), TL
+300
°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Recommended Operating Conditions:
Parameter
Symbol
Test Conditions
Min
Max
Units
Supply Voltage
VCC
4.75
5.25
V
Ambient temperature
TA
0
+70
°C


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