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IRFIZ48VPBF Datasheet(PDF) 2 Page - International Rectifier

Part No. IRFIZ48VPBF
Description  HEXFET Power MOSFET
Download  8 Pages
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
Logo IRF - International Rectifier

IRFIZ48VPBF Datasheet(HTML) 2 Page - International Rectifier

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IRFIZ48V
2
www.irf.com
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)
‡
–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
2.0
V
TJ = 25°C, IS = 72A, VGS = 0V
„‡
trr
Reverse Recovery Time
–––
70
100
ns
TJ = 25°C, IF = 72A
Qrr
Reverse Recovery Charge
–––
155
233
nC
di/dt = 100A/µs
„‡
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
39
290
A
‚ Starting TJ = 25°C, L = 64µH
RG = 25Ω, IAS = 72A. (See Figure 12)
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Notes:
ƒ ISD ≤ 72A, di/dt ≤ 151A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
60
–––
–––
VVGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.064 –––
V/°C
Reference to 25°C, ID = 1mA
‡
RDS(on)
Static Drain-to-Source On-Resistance
–––
–––
12.0
m
VGS = 10V, ID = 43A
„
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
35
–––
–––
SVDS = 25V, ID = 43A
„‡
–––
–––
25
µA
VDS = 60V, VGS = 0V
–––
–––
250
VDS = 48V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
–––
100
VGS = 20V
Gate-to-Source Reverse Leakage
–––
–––
-100
nA
VGS = -20V
Qg
Total Gate Charge
–––
–––
110
ID = 72A
Qgs
Gate-to-Source Charge
–––
–––
29
nC
VDS = 48V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
36
VGS = 10V, See Fig. 6 and 13
„‡
td(on)
Turn-On Delay Time
–––
7.6
–––
VDD = 30V
tr
Rise Time
–––
200
–––
ID = 72A
td(off)
Turn-Off Delay Time
–––
157
–––
RG = 9.1Ω
tf
Fall Time
–––
166
–––
RD = 0.34Ω, See Fig. 10
„‡
Between lead,
–––
–––
6mm (0.25in.)
from package
and center of die contact
Ciss
Input Capacitance
–––
1985 –––
VGS = 0V
Coss
Output Capacitance
–––
496
–––
VDS = 25V
nH
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
LD
Internal Drain Inductance
LS
Internal Source Inductance
–––
–––
S
D
G
IGSS
ns
4.5
7.5
IDSS
Drain-to-Source Leakage Current
Eas
Single Pulse Avalanche Energy
‚‡
–––
780
… 170† mJ I
AS = 72A, L = 64mH
Crss
Reverse Transfer Capacitance
–––
91
–––
pF
ƒ = 1.0MHz, See Fig. 5
‡
… This is a typical value at device destruction and represents
operation outside rated limits.
† This is a calculated value limited to TJ = 175°C .
‡ Uses IRFZ48V data and test conditions.
ˆ t = 60s, f = 60Hz


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