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XP131A0616SR Datasheet(PDF) 4 Page - Torex Semiconductor |
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XP131A0616SR Datasheet(HTML) 4 Page - Torex Semiconductor |
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4 / 4 page  XP131A0616SR Power MOSFET 348 u 5 4 3 2 1 0 020 10 30 40 50 Gate/Source Voltage vs. Gate Charge Vds=10V, Id=10A Gate Charge:Qg (nc) 1.5V 2.5V 0,-4.5V Vgs＝4.5V 30 20 10 5 25 15 0 0 0.2 0.4 0.6 0.8 1 Reverse Drain Current vs. Source/Drain Voltage Pulse Test Source/Drain Voltage:Vsd (V) 10 0.0001 0.01 0.001 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 Standardized Transition Thermal Resistance vs. Pulse Width Rth (ch-a)=50˚C/W, (Implemented on a glass epoxy PCB) Pulse Width:PW (sec) Single Pulse ■ Electrical Characteristics 10000 100 1000 010 15 520 Ciss Coss Crss Drain/Source Voltage vs. Capacitance Vgs=0V, f=1MHz Drain/Source Voltage:Vds (V) 1000 10 100 0.1 1 10 tf tr td（off） td（on） Switching Time vs. Drain Current Vgs=5V, Vdd ≒10V, PW=10 µsec. duty≦1% Drain Current:Id (A) |
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