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SUD45N05-20L Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. SUD45N05-20L
Description  N-Channel 50-V (D-S), 175C MOSFET, Logic Level
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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SUD45N05-20L Datasheet(HTML) 2 Page - Vishay Siliconix

   
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SUD45N05-20L
Vishay Siliconix
www.vishay.com
S FaxBack 408-970-5600
2-2
Document Number: 70271
S-57247—Rev. E, 23-Mar-98
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typa
Max
Unit
Static
Drain-Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
50
V
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 mA
1.0
2.0
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
"100
nA
ZG
V l
D i C
I
VDS = 50 V, VGS = 0 V
1
A
Zero Gate Voltage Drain Current
IDSS
VDS = 50 V, VGS = 0 V, TJ = 125_C
50
mA
VDS = 50 V, VGS = 0 V, TJ = 175_C
150
On-State Drain Currentb
ID(on)
VDS = 5 V, VGS = 10 V
43
A
DiS
OS
R
i
b
VGS = 10 V, ID = 20 A
0.018
W
Drain-Source On-State Resistanceb
rDS(on)
VGS = 10 V, ID = 20 A, TJ = 125_C
0.036
W
Drain-Source On-State Resistanceb
rDS(on)
VGS = 10 V, ID = 43 A, TJ = 125_C
0.040
W
VGS = 4.5 V, ID = 43 A
0.020
Forward Transconductanceb
gfs
VDS = 15 V, ID = 43 A
20
S
Dynamica
Input Capacitance
Ciss
1800
3600
F
Output Capacitance
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
370
pF
Reverse Transfer Capacitance
Crss
130
Total Gate Chargec
Qg
V25 V V
10 V I
43 A
43
60
C
Gate-Source Chargec
Qgs
VDS = 25 V, VGS = 10 V, ID = 43 A
7
nC
Gate-Drain Chargec
Qgd
10
Turn-On Delay Timec
td(on)
V25 V R
0 6
W
10
20
Rise Timec
tr
VDD = 25 V, RL = 0.6 W
I
43A V
10V R
2 5
W
10
20
ns
Turn-Off Delay Timec
td(off)
DD
,
L
ID ^ 43 A, VGEN = 10 V, RG = 2.5 W
32
60
ns
Fall Timec
tf
7
15
Source-Drain Diode Ratings and Characteristic (TC = 25_C)
Pulsed Current
ISM
43
A
Diode Forward Voltageb
VSD
IF = 43 A, VGS = 0 V
1.5
V
Source-Drain Reverse Recovery Time
trr
IF = 43 A, di/dt = 100 A/ms
49
100
ns
Notes
a.
Guaranteed by design, not subject to production testing.
b.
Pulse test; pulse width
v 300 ms, duty cycle v 2%.
c.
Independent of operating temperature.


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