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SI2319DS Datasheet(PDF) 4 Page - Vishay Siliconix

Part No. SI2319DS
Description  P-Channel 40-V (D-S) MOSFET
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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SI2319DS Datasheet(HTML) 4 Page - Vishay Siliconix

   
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Si2319DS
Vishay Siliconix
www.vishay.com
4
Document Number: 72315
S-40844—Rev. B, 03-May-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
−0.4
−0.2
0.0
0.2
0.4
0.6
−50
−25
0
25
50
75
100
125
150
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0
2468
10
TJ = 150_C
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
Single Pulse Power
Square Wave Pulse Duration (sec)
VSD − Source-to-Drain Voltage (V)
VGS − Gate-to-Source Voltage (V)
TJ − Temperature (_C)
Time (sec)
ID = 3 A
ID = 250 mA
20
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
TJ = 25_C
1
TA = 25_C
Single Pulse
Safe Operating Area, Junction-to-Case
VDS − Drain-to-Source Voltage (V)
100.0
1.0
0.1
1
10
100
0.01
10.0
0.1
Limited by
rDS(on)
TA = 25_C
Single Pulse
10 ms
100 ms
10 ms
100 ms
1 ms
dc, 100 s, 10 s, 1 s
10
8
6
4
2
0
0.01
0.1
1
10
100
1000
10


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