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SI2319DS Datasheet(PDF) 3 Page - Vishay Siliconix

Part No. SI2319DS
Description  P-Channel 40-V (D-S) MOSFET
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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SI2319DS Datasheet(HTML) 3 Page - Vishay Siliconix

   
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Si2319DS
Vishay Siliconix
Document Number: 72315
S-40844—Rev. B, 03-May-04
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
−50
−25
0
25
50
75
100
125
150
0
2
4
6
8
10
0
246
8
10
12
0
100
200
300
400
500
600
700
800
0
5
10
15
20
25
30
35
40
0.00
0.04
0.08
0.12
0.16
0.20
0
246
8
10
12
0
4
8
12
16
20
0
2468
10
0
2
4
6
8
10
12
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
On-Resistance vs. Drain Current
Output Characteristics
Transfer Characteristics
VDS − Drain-to-Source Voltage (V)
VGS − Gate-to-Source Voltage (V)
TC = 125_C
−55_C
VGS = 10 thru 5 V
1 V, 2 V
3 V
Gate Charge
Qg − Total Gate Charge (nC)
VDS − Drain-to-Source Voltage (V)
Crss
Coss
Ciss
VDS = 20 V
ID = 3 A
ID − Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
VGS = 10 V
ID = 3 A
TJ − Junction Temperature (_C)
VGS = 10 V
VGS = 4.5 V
25_C
4 V


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