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SI2319DS Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. SI2319DS
Description  P-Channel 40-V (D-S) MOSFET
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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SI2319DS Datasheet(HTML) 2 Page - Vishay Siliconix

   
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Si2319DS
Vishay Siliconix
www.vishay.com
2
Document Number: 72315
S-40844—Rev. B, 03-May-04
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Limits
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = −250 mA
−40
V
Gate-Threshold Voltage
VGS(th)
VDS = VGS, ID = −250 mA
−1.0
−3.0
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
"100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = −40 V, VGS = 0 V
−1
mA
Zero Gate Voltage Drain Current
IDSS
VDS = −40 V, VGS = 0 V, TJ = 55_C
−10
mA
On-State Drain Currenta
ID(on)
VDS v −5 V, VGS = −10 V
−6
A
Drain Source On Resistancea
rDS( )
VGS = −10 V, ID = −3.0 A
0.065
0.082
W
Drain-Source On-Resistancea
rDS(on)
VGS = −4.5 V, ID = −2.4 A
0.100
0.130
W
Forward Transconductancea
gfs
VDS = −5 V, ID = −3.0 A
7.0
S
Diode Forward Voltage
VSD
IS = −1.25 A, VGS = 0 V
−0.8
−1.2
V
Dynamicb
Total Gate Charge
Qg
11.3
17
Gate-Source Charge
Qgs
VDS = −20 V, VGS = −10 V
ID ^ −3 A
1.7
nC
Gate-Drain Charge
Qgd
ID ^ −3 A
3.3
Input Capacitance
Ciss
470
Output Capacitance
Coss
VDS = −20 V, VGS = 0, f = 1 MHz
85
pF
Reverse Transfer Capacitance
Crss
65
Switchingc
Turn On Time
td(on)
7
15
Turn-On Time
tr
VDD = −20 V, RL =20 W
ID ^ −10 A VGEN = −45 V
15
25
ns
Turn-Off Time
td(off)
ID ^ −1.0 A, VGEN = −4.5 V
Rg = 6 W
25
40
ns
Turn-Off Time
tf
g
25
40
Notes
a.
Pulse test: PW v300 ms duty cycle v2%.
b.
For DESIGN AID ONLY, not subject to production testing.
c.
Switching time is essentially independent of operating temperature. S FaxBack 408-970-5600


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