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SI2319DS Datasheet(PDF) 1 Page - Vishay Siliconix

Part No. SI2319DS
Description  P-Channel 40-V (D-S) MOSFET
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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SI2319DS Datasheet(HTML) 1 Page - Vishay Siliconix

   
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FEATURES
D TrenchFETr Power MOSFET
APPLICATIONS
D Load Switch
Si2319DS
Vishay Siliconix
Document Number: 72315
S-40844—Rev. B, 03-May-04
www.vishay.com
1
P-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)b
40
0.082 @ VGS = −10 V
−3.0
−40
0.130 @ VGS = −4.5 V
−2.4
G
TO-236
(SOT-23)
S
D
Top View
2
3
1
*Marking Code
Si2319DS (C9)*
Ordering Information: Si2319DS-T1
Si2319DS-T1—E3 (Lead Free)
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State
Unit
Drain-Source Voltage
VDS
−40
V
Gate-Source Voltage
VGS
"20
V
Continuous Drain Current (TJ = 150_C)b
TA= 25_C
ID
−3.0
−2.3
Continuous Drain Current (TJ = 150_C)b
TA= 70_C
ID
−2.4
−1.85
A
Pulsed Drain Currenta
IDM
−12
A
Continuous Source Current (Diode Conduction)b
IS
−1.0
−0.62
Power Dissipationb
TA= 25_C
PD
1.25
0.75
W
Power Dissipationb
TA= 70_C
PD
0.8
0.48
W
Operating Junction and Storage Temperature Range
TJ, Tstg
−55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb
R
75
100
Maximum Junction-to-Ambientc
RthJA
120
166
_C/W
Maximum Junction-to-Foot (Drain)
RthJF
40
50
Notes
a.
Pulse width limited by maximum junction temperature.
b.
Surface Mounted on FR4 Board, t v 5 sec.
c.
Surface Mounted on FR4 Board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm


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