FDD9411L_F085 datasheet(5/8 Pages) ONSEMI

Part #	FDD9411L_F085

Description	N-Channel Logic Level PowerTrench MOSFET

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Figure 5.

0.1

1

10

100 200

0.1

1

10

100

1000

OPERATION IN THIS

AREA MAY BE

LIMITED BY PACKAGE

100us

1ms

10ms

VDS, DRAIN TO SOURCE VOLTAGE (V)

OPERATION IN THIS

AREA MAY BE

LIMITED BY rDS(on)

SINGLE PULSE

TJ = MAX RATED

TC = 25oC

100ms

Forward Bias Safe Operating Area

0.001

0.01

0.1

1

10

100

1

10

100

STARTING TJ = 150oC

STARTING TJ = 25oC

tAV, TIME IN AVALANCHE (ms)

tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)

If R = 0

If R

≠ 0

tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]

NOTE: Refer to Fairchild Application Notes AN7514 and AN7515

Figure 6. Unclamped Inductive Switching

Capability

Figure 7.

1

2

345

0

20

40

60

80

100

TJ = -55oC

TJ = 25oC

TJ = 175oC

PULSE DURATION = 250μs

DUTY CYCLE = 0.5% MAX

VDD = 5V

VGS, GATE TO SOURCE VOLTAGE (V)

Transfer Characteristics

Figure 8.

0.00.2

0.40.60.81.0

1.2

0.1

1

10

100

TJ = 25 oC

TJ = 175 oC

VGS = 0 V

VSD, BODY DIODE FORWARD VOLTAGE (V)

Forward Diode Characteristics

Figure 9.

012

345

0

20

40

60

80

100

3V

VGS

10V Top

6V

5V

4.5V

4V

3.5V

3V

Bottom

250μs PULSE WIDTH

Tj=25oC

VDS, DRAIN TO SOURCE VOLTAGE (V)

Saturation Characteristics

Figure 10.

012

345

0

20

40

60

80

100

3V

VGS

10V Top

6V

5V

4.5V

4V

3.5V

3V

Bottom

250μs PULSE WIDTH

Tj=175oC

VDS, DRAIN TO SOURCE VOLTAGE (V)

Saturation Characteristics

Typical Characteristics

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FDD9411L_F085 Datasheet(PDF) 5 Page - ON Semiconductor

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