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ADT461S24 Datasheet(PDF) 1 Page - Power Semiconductors

Part # ADT461S24
Description  PHASE CONTROL MODULE
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Manufacturer  POSEICO [Power Semiconductors]
Direct Link  http://www.poseico.com
Logo POSEICO - Power Semiconductors

ADT461S24 Datasheet(HTML) 1 Page - Power Semiconductors

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PHASE CONTROL MODULE
ADT461
Repetitive voltage up to
2400 V
Mean forward current
462 A
Surge current
12 kA
FINAL SPECIFICATION
apr 17 - ISSUE : 02
Symbol
Characteristic
Conditions
Tj
[°C]
Value
Unit
BLOCKING
V RRM
Repetitive peak reverse/off-state voltage
125
2400
V
V RSM
Non-repetitive peak reverse voltage
125
2500
V
I RRM/DRM
Repetitive peak reverse/off-state current
125
50
mA
CONDUCTING
I T (AV)
Mean forward current
180° sin, 50 Hz, Th=85°C, double side cooled
462
A
I T (AV)
Mean forward current
180° sin, 50 Hz, Tc=55°C, double side cooled
687
A
I TSM
Surge forward current
Sine wave, 10 ms
125
12
kA
I² t
I² t
without reverse voltage
720 x 10
3
A²s
V T
On-state voltage
On-state current =
1600 A
25
2,00
V
V T(TO)
Threshold voltage
125
1,10
V
r T
On-state slope resistance
125
0,552
mohm
SWITCHING
di/dt
Critical rate of rise of on-state current, min.
From 75% VDRM up to 1050 A; gate 10V, 5
W
125
200
A/µs
dv/dt
Critical rate of rise of off-state voltage, min.
Linear ramp up to 70% of VDRM
125
500
V/µs
t d
Gate controlled delay time, typical
VD=100V; gate source 25V, 10
W , tr=.5 µs
25
1,1
µs
t q
Circuit commutated turn-off time, typical
dv/dt = 20 V/µs linear up to 75% VDRM
200
µs
Q rr
Reverse recovery charge
di/dt = -20 A/µs, I= 700 A
125
µC
I rr
Peak reverse recovery current
VR= 50 V
A
I H
Holding current, typical
VD=5V, gate open circuit
25
300
mA
I L
Latching current, typical
VD=5V, tp=30µs
25
700
mA
GATE
V GT
Gate trigger voltage
VD=5V
25
3,50
V
I GT
Gate trigger current
VD=5V
25
250
mA
V GD
Non-trigger gate voltage, min.
VD=VDRM
125
0,25
V
V FGM
Peak gate voltage (forward)
30
V
I FGM
Peak gate current
10
A
V RGM
Peak gate voltage (reverse)
5
V
P GM
Peak gate power dissipation
Pulse width 100 µs
150
W
P G
Average gate power dissipation
2
W
MOUNTING
R th(j-h)
Thermal impedance, DC
Junction to case, per element
50,0
°C/kW
R th(c-h)
Thermal impedance
Case to heatsink, per element
20,0
°C/kW
T j
Operating junction temperature
-30 / 125
°C
V ins
RMS insulation voltage
50 hz , circuit to base, all terminal shorted
25
4500
V
T
Mounting torque
Case to heatsink
4 to 6
kN
T
Mounting torque
Busbars to terminal
12 to 18
kN
Mass
1500
g
ORDERING INFORMATION : ADT461 S 24
standard specification
VRRM/100
POSEICO SPA
Via Pillea 42-44, 16153 Genova - ITALY
Tel. + 39 010 8599400 - Fax + 39 010 8682006
Sales Office:
Tel. + 39 010 8599400 - sales@poseico.com


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