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CNY1713S Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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CNY1713S Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 14 page  2 www.fairchildsemi.com CNY17-1, CNY17-3, CNY17-2, CNY17-4 Rev. 1.0.2 Electrical Characteristics (TA = 25°C Unless otherwise specified.) Individual Component Characteristics Parameters Symbol Device Value Units TOTAL DEVICE Storage Temperature TSTG All -55 to +150 °C Operating Temperature TOPR All -55 to +100 °C Lead Solder Temperature TSOL All 260 for 10 sec °C Total Device Power Dissipation @ 25°C (LED plus detector) Derate Linearly From 25°C PD -M 250 mW non -M 260 -M 2.94 mW/°C non -M 3.50 EMITTER Continuous Forward Current IF -M 60 mA non -M 90 Reverse Voltage VR All 6 V Forward Current - Peak (1 µs pulse, 300 pps) IF (pk) -M 1.5 A non -M 3.0 LED Power Dissipation 25°C Ambient Derate Linearly From 25°C PD -M 120 mW non -M 135 -M 1.41 mW/°C non -M 1.8 DETECTOR Detector Power Dissipation @ 25°C Derate Linearly from 25°C PD -M 150 mW non -M 200 -M 1.76 mW/°C non -M 2.67 Parameters Test Conditions Symbol Device Min Typ Max Units EMITTER Input Forward Voltage IF = 60 mA VF -M 1.35 1.65 V IF = 10 mA non -M 1.15 1.50 Capacitance VF = 0 V, f = 1.0 MHz CJ non -M 50 pF -M 18 Reverse Leakage Current VR = 6 V IR All 0.001 10 µA DETECTOR Breakdown Voltage Collector to Emitter Collector to Base Emitter to Collector IC = 1.0 mA, IF = 0 IC = 10 µA, IF = 0 IE = 100 µA, IF = 0 BVCEO BVCBO BVECO All All All 70 70 7 100 120 10 V V V Leakage Current Collector to Emitter Collector to Base VCE = 10 V, IF = 0 VCB = 10 V, IF = 0 ICEO ICBO All All 150 20 nA nA Capacitance Collector to Emitter Collector to Base Emitter to Base VCE = 0, f = 1 MHz VCB = 0, f = 1 MHz VEB = 0, f = 1 MHz CCE CCB CEB All All All 8 20 10 pF pF pF |
Similar Part No. - CNY1713S |
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Similar Description - CNY1713S |
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