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LM5025ASD Datasheet(PDF) 7 Page - National Semiconductor (TI) |
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LM5025ASD Datasheet(HTML) 7 Page - National Semiconductor (TI) |
7 / 16 page Electrical Characteristics (Continued) Specifications with standard typeface are for T J = 25˚C, and those with boldface type apply over full Operating Junction Temperature range.V IN = 48V, VCC = 10V, RT = 31.3k Ω,R SET = 27.4k Ω) unless otherwise stated (Note 3) Symbol Parameter Conditions Min Typ Max Units OUTPUT_B Peak Current Sink Bipolar Device @ Vcc/2 1 A OUT_B Low Saturation MOS Device @ Iout = 10mA, 12 18 Ω OUTPUT_B Rise Time C gate = 1nF 20 ns OUTPUT_B Fall Time C gate = 1nF 15 ns Output Timing Control Overlap Time R SET =38k Ω connected to GND, 50% to 50% transitions 75 105 135 ns Deadtime R SET = 29.5 k Ω connected to REF, 50% to 50% transitions 75 105 135 ns Thermal Shutdown T SD Thermal Shutdown Threshold 165 ˚C Thermal Shutdown Hysteresis 25 ˚C Thermal Resistance θ JA Junction to Ambient MTC Package 125 ˚C/W SDA Package 32 ˚C/W Note 1: Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions under which operation of the device is intended to be functional. For guaranteed specifications and test conditions, see the Electrical Characteristics. Note 2: For detailed information on soldering plastic TSSOP and LLP packages, refer to the Packaging Data Book available from National Semiconductor Corporation. Note 3: All limits are guaranteed. All electrical characteristics having room temperature limits are tested during production with TA =TJ = 25˚C. All hot and cold limits are guaranteed by correlating the electrical characteristics to process and temperature variations and applying statistical process control. Note 4: Device thermal limitations may limit usable range. www.national.com 7 |
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