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LM5025A Datasheet(PDF) 6 Page - National Semiconductor (TI) |
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LM5025A Datasheet(HTML) 6 Page - National Semiconductor (TI) |
6 / 16 page Electrical Characteristics (Continued) Specifications with standard typeface are for T J = 25˚C, and those with boldface type apply over full Operating Junction Temperature range.V IN = 48V, VCC = 10V, RT = 31.3k Ω,R SET = 27.4k Ω) unless otherwise stated (Note 3) Symbol Parameter Conditions Min Typ Max Units CS2 Sink Impedance (Post Fault Discharge) CS2 = 0.6V 55 85 Ω CS1 and CS2 Leakage Current CS = CS Threshold - 100mV 1 µA Soft-Start Soft-start Current Source Normal 17 22 27 µA Soft-start Current Source following a CS2 event 0.5 1 1.5 µA Oscillator Frequency1 T A = 25˚C T J =Tlow to Thigh 180 175 200 220 225 kHz Frequency2 RT = 10.4K Ω 510 580 650 kHz Sync threshold 2 V Min Sync Pulse Width 100 ns Sync Frequency Range 160 kHz PWM Comparator Delay to Output COMP step 5V to 0V Time to onset of OUT_A transition low 40 ns Duty Cycle Range 080 % COMP to PWM Offset 0.7 1 1.3 V COMP Open Circuit Voltage 4.3 5.9 V COMP Short Circuit Current COMP = 0V 0.6 1 1.4 mA Volt x Second Clamp Ramp Clamp Level Delta RAMP measured from onset of OUT_A to Ramp peak. COMP = 5V 2.4 2.5 2.6 V UVLO Shutdown Undervoltage Shutdown Threshold 2.44 2.5 2.56 V Undervoltage Shutdown Hysteresis 16 20 24 µA Output Section OUT_A High Saturation MOS Device @ Iout = -10mA, 5 10 Ω OUTPUT_A Peak Current Sink Bipolar Device @ Vcc/2 3 A OUT_A Low Saturation MOS Device @ Iout = 10mA, 6 9 Ω OUTPUT_A Rise Time C gate = 2.2nF 20 ns OUTPUT_A Fall Time C gate = 2.2nF 15 ns OUT_B High Saturation MOS Device @ Iout = -10mA, 10 20 Ω www.national.com 6 |
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