FCH040N65S3_F155 datasheet(4/10 Pages) ONSEMI

Part #	FCH040N65S3_F155

Description	N-Channel SuperFET MOSFET

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Typical Performance Characteristics

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs.

Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage

Variation vs. Source Current

and Temperature

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

0.2

1

10

20

1

10

100

200

*Notes:

1. 250μs Pulse Test

2. TC = 25

oC

VDS, Drain-Source Voltage[V]

VGS = 10.0V

8.0V

7.0V

6.5V

6.0V

5.5V

345

678

9

1

10

100

300

-55

oC

150

oC

*Notes:

1. VDS = 20V

2. 250μs Pulse Test

25

oC

VGS, Gate-Source Voltage[V]

0.00.5

1.01.5

0.001

0.01

0.1

1

10

100

1000

*Notes:

1. V

GS = 0V

2. 250μs Pulse Test

150

oC

V

SD, Body Diode Forward Voltage [V]

25

oC

0

60

120

180

0.01

0.02

0.03

0.04

0.05

0.06

*Note: TC = 25

oC

VGS = 20V

VGS = 10V

ID, Drain Current [A]

10

-1

110

10

2

10

3

10

-1

1

10

2

10

3

10

4

10

5

Coss

Ciss

Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd

Crss = Cgd

*Note:

1. VGS = 0V

2. f = 1MHz

Crss

VDS, Drain-Source Voltage [V]

0

50

100

150

0

2

4

6

8

10

VDS = 400V

VDS = 130V

*Note: ID = 32.5A

Qg, Total Gate Charge [nC]

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FCH040N65S3_F155 Datasheet(PDF) 4 Page - ON Semiconductor

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