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FCB199N65S3 Datasheet(PDF) 2 Page - ON Semiconductor

Part No. FCB199N65S3
Description  N-Channel SuperFET III MOSFET
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

FCB199N65S3 Datasheet(HTML) 2 Page - ON Semiconductor

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www.onsemi.com
Semiconductor Components Industries, LLC, 2017
Publication Order Number:
March, 2017, Rev. 1.0
FCB199N65S3/D
1
Absolute Maximum Ratings T
C = 25
oC unless otherwise noted.
Thermal Characteristics
Symbol
Parameter
FCB199N65S3
Unit
VDSS
Drain to Source Voltage
650
V
VGSS
Gate to Source Voltage
- DC
±30
V
- AC
(f > 1 Hz)
±30
V
ID
Drain Current
- Continuous (TC = 25oC)
14
A
- Continuous (TC = 100oC)
9
IDM
Drain Current
- Pulsed
(Note 1)
35
A
EAS
Single Pulsed Avalanche Energy
(Note 2)
76
mJ
IAS
Avalanche Current
(Note 1)
2.5
A
EAR
Repetitive Avalanche Energy
(Note 1)
0.98
mJ
dv/dt
MOSFET dv/dt
100
V/ns
Peak Diode Recovery dv/dt
(Note 3)
20
PD
Power Dissipation
(TC = 25oC)
98
W
- Derate Above 25oC0.79
W/oC
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
oC
TL
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
300
oC
Symbol
Parameter
FCB199N65S3
Unit
RθJC
Thermal Resistance, Junction to Case, Max.
1.27
oC/W
RθJA
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.
62.5
Thermal Resistance, Junction to Ambient (1 in2 Pad of 2-oz Copper), Max.
40
FCB199N65S3
N-Channel SuperFET® III MOSFET
650 V, 14 A, 199 m
Ω
Features
• 700 V @ TJ = 150 oC
•Typ. RDS(on) = 170 mΩ
• Ultra Low Gate Charge (Typ. Qg = 30 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 277 pF)
• 100% Avalanche Tested
• RoHS Compliant
Applications
• Computing / Display Power Supplies
• Telecom / Server Power Supplies
• Industrial Power Supplies
Description
SuperFET® III MOSFET is ON Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This advanced technology
is tailored to minimize conduction loss, provide superior switch-
ing performance, and withstand extreme dv/dt rate. Conse-
quently, SuperFET III MOSFET is very suitable for various
power system for miniaturization and higher efficiency.
G
S
D
D2-PAK
G
S
D


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