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JCS7N80H Datasheet(PDF) 4 Page - JILIN SINO-MICROELECTRONICS CO., LTD.

Part # JCS7N80H
Description  Electronic ballast
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Manufacturer  JSMC [JILIN SINO-MICROELECTRONICS CO., LTD.]
Direct Link  http://www.hwdz.com.cn
Logo JSMC - JILIN SINO-MICROELECTRONICS CO., LTD.

JCS7N80H Datasheet(HTML) 4 Page - JILIN SINO-MICROELECTRONICS CO., LTD.

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JCS7N80H
版本:201506B
4/9
电特性 ELECTRICAL CHARACTERISTICS
热特性 THERMAL CHARACTERISTIC
开关特性 Switching Characteristics
延迟时间 Turn-On delay time
td(on)
VDD=400V,ID=7A,RG=25Ω
(note 4,5)
-
40
80
ns
上升时间 Turn-On rise time
tr
-
105 210
ns
延迟时间 Turn-Off delay time
td(off)
-
55
110
ns
下降时间 Turn-Off Fall time
tf
-
65
130
ns
栅极电荷总量 Total Gate Charge
Qg
VDS =640V ,
ID=7A
VGS =10V
(note 4,5)
-
39
50
nC
栅-源电荷 Gate-Source charge
Qgs
-
7.9
-
nC
栅-漏电荷 Gate-Drain charge
Qgd
-
21
-
nC
漏-源二极管特性及最大额定值 Drain-Source Diode Characteristics and Maximum Ratings
正向最大连续电流
Maximum Continuous Drain
-Source Diode Forward Current
IS
-
-
7
A
正向最大脉冲电流
Maximum Pulsed Drain-Source
Diode Forward Current
ISM
-
-
28
A
正向压降
Drain-Source Diode Forward
Voltage
VSD
VGS=0V,
IS=7A
-
-
1.4
V
反向恢复时间
Reverse recovery time
trr
VGS=0V, IS=7A
dIF/dt=100A/μs
(note 4)
-
640
-
ns
反向恢复电荷
Reverse recovery charge
Qrr
-
6.0
-
μC
Parameter
Symbol
最大
Max
单 位
Unit
JCS7N80CH
JCS7N80FH
结到管壳的热阻
Thermal Resistance, Junction to Case
Rth(j-c)
0.65
0.78
℃/W
结到环境的热阻
Thermal Resistance, Junction to Ambient
Rth(j-A)
41
41
℃/W
注释:
1:脉冲宽度由最高结温限制
2:L=0.5mH, IAS=7A, VDD=50V,
RG=25 Ω,起始结温
TJ=25℃
3:ISD ≤5A,di/dt ≤200A/μs,VDD≤BVDSS,起始结温
TJ=25℃
4:脉冲测试:脉冲宽度
≤300μs,占空比≤2%
5:基本与工作温度无关
Notes:
1:Pulse width limited by maximum junction
temperature
2:L=0.5mH, IAS=7A, VDD=50V, RG=25 Ω,Starting
TJ=25℃
3:ISD ≤5A,di/dt ≤200A/μs,VDD≤BVDSS, Starting
TJ=25℃
4:Pulse Test:
Pulse Width ≤300μs,Duty Cycle≤2%
5:Essentially independent of operating temperature


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