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IW4011BN Datasheet(PDF) 3 Page - List of Unclassifed Manufacturers

Part No. IW4011BN
Description  Quad 2-Input NAND Gate High-Voltage Silicon-Gate CMOS
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Maker  ETC [List of Unclassifed Manufacturers]
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IW4011BN Datasheet(HTML) 3 Page - List of Unclassifed Manufacturers

   
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IW4011B
13
DC ELECTRICAL CHARACTERISTICS(Voltages Referenced to GND)
VCC
Guaranteed Limit
Symbol
Parameter
Test Conditions
V
≥-55°C25°C
≤125
°C
Unit
VIH
Minimum High-Level
Input Voltage
VOUT=0.5 V or VCC - 0.5 V
VOUT=1.0 V or VCC - 1.0 V
VOUT=1.5 V or VCC - 1.5 V
5.0
10
15
3.5
7
11
3.5
7
11
3.5
7
11
V
VIL
Maximum Low -Level
Input Voltage
VOUT= VCC - 0.5V
VOUT= VCC - 1.0 V
VOUT= VCC - 1.5V
5.0
10
15
1.5
3
4
1.5
3
4
1.5
3
4
V
VOH
Minimum High-Level
Output Voltage
VIN=GND or VCC
5.0
10
15
4.95
9.95
14.95
4.95
9.95
14.95
4.95
9.95
14.95
V
VOL
Maximum Low-Level
Output Voltage
VIN= VCC
5.0
10
15
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
V
IIN
Maximum Input
Leakage Current
VIN= GND or VCC
18
±0.1
±0.1
±1.0
µA
ICC
Maximum Quiescent
Supply Current
(per Package)
VIN= GND or VCC
5.0
10
15
20
0.25
0.5
1.0
5.0
0.25
0.5
1.0
5.0
7.5
15
30
150
µA
IOL
Minimum Output Low
(Sink) Current
VIN= GND or VCC
UOL=0.4 V
UOL=0.5 V
UOL=1.5 V
5.0
10
15
0.64
1.6
4.2
0.51
1.3
3.4
0.36
0.9
2.4
mA
IOH
Minimum Output
High (Source) Current
VIN= GND or VCC
UOH=2.5 V
UOH=4.6 V
UOH=9.5 V
UOH=13.5 V
5.0
5.0
10
15
-2.0
-0.64
-1.6
-4.2
-1.6
-0.51
-1.3
-3.4
-1.15
-0.36
-0.9
-2.4
mA


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