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ICPL3120G Datasheet(PDF) 1 Page - ISOCOM COMPONENTS

Part # ICPL3120G
Description  IGBT/MOSFET Gate Drive
Download  14 Pages
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Manufacturer  ISOCOM [ISOCOM COMPONENTS]
Direct Link  http://www.isocom.com
Logo ISOCOM - ISOCOM COMPONENTS

ICPL3120G Datasheet(HTML) 1 Page - ISOCOM COMPONENTS

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1 28/09/2017
ICPL3120
DD93213
ISOCOM
COMPONENTS
DESCRIPTION
The ICPL3120 consists of an Infrared Light Emitting
Diode optically coupled to an Integrated Circuit with a
Power Driving Output. ICPL3120 is ideally suitable to
drive the Power IGBT and MOSFET in Inverters of
Motor Controls and in Power Supplies.
The 2.5A peak output current is capable to direct drive
IGBT/MOSFET up to ratings of 1200V/100A. For IGBTs
with higher ratings, ICPL3120 can be used to drive a
discrete power stage which drives the IGBT gate.
FEATURES
±2.5A Maximum Peak Output Current
35kV/μs Minimum Common Mode Rejection
at VCM 1500V
Maximum Propagation Delay 500ns
Maximum Propagation Delay Difference 100ns
Wide Operating Voltage Range
VCC 15 to 30 V
Maximum Supply Current ICC 3.5mA
Under Voltage Lock Out (UVLO) Protection
with Hysteresis
Guaranteed Performance over
Temperature Range - 40°C to +105°C
MSL 1
Lead Free and RoHS Compliant
Safety Approvals Pending
APPLICATIONS
IGBT/MOSFET Gate Drive
UPS
Inverters
AC Brushless and DC Motor Drives
ORDER INFORMATION
Add G after PN for 10mm lead spacing
Add SM after PN for Surface Mount
Add SMT&R after PN for Surface Mount
Tape & Reel
ISOCOM COMPONENTS 2004 LTD
Unit 25B, Park View Road West, Park View Industrial Estate
Hartlepool, Cleveland, TS25 1PE, United Kingdom
Tel : +44 (0)1429 863 609 Fax : +44 (0)1429 863 581
e-mail : sales@isocom.co.uk
http://www.isocom.com
ISOCOM COMPONENTS ASIA LTD
Hong Kong Office,
Block A, 8/F, Wah Hing Industrial mansion,
36 Tai Yau Street, San Po Kong, Kowloon, Hong Kong.
Tel : +852 2995 9217 Fax : +852 8161 6292
e-mail : sales@isocom.com.hk
A 0.1
μF bypass Capacitor must be connected between Pins 8 and 5.
Input
Forward Current
20mA
Forward Current Rise / Fall Time
500ns
Power dissipation
45mW
Reverse Voltage
5V
Forward Peak Current
(Pulse Width ≤ 1μs, 300pps)
1A
Output
Peak Output Current
(Exponential waveform,
Pulse Width ≤ 0.3μs, f ≤ = 15kHz)
±2.5A
Operating Frequency
(Exponential waveform,
IO(Peak) ≤ l2.5Al, Pulse Width ≤ 0.3μs)
50kHz
Supply Voltage (VCC ‒ VEE)
0V to 35V
Output Voltage
0V to VCC
Power Dissipation
250mW
Isolation Voltage
5000VRMS
Total Power Dissipation
295mW
Operating Temperature
-40 to 105 °C
Storage Temperature
-55 to 125 °C
Lead Soldering Temperature
(10s)
260°C
Total Package
1 NC
2 Anode
3 Cathode
4 NC
5 GND (VEE)
6 VO
7 VO
8 VCC
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Stresses exceeding the absolute maximum ratings can cause
permanent damage to the device.
Exposure to absolute maximum ratings for long periods of time
can adversely affect reliability.


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