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ICPL3120G Datasheet(PDF) 1 Page - ISOCOM COMPONENTS |
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ICPL3120G Datasheet(HTML) 1 Page - ISOCOM COMPONENTS |
1 / 14 page 1 28/09/2017 ICPL3120 DD93213 ISOCOM COMPONENTS DESCRIPTION The ICPL3120 consists of an Infrared Light Emitting Diode optically coupled to an Integrated Circuit with a Power Driving Output. ICPL3120 is ideally suitable to drive the Power IGBT and MOSFET in Inverters of Motor Controls and in Power Supplies. The 2.5A peak output current is capable to direct drive IGBT/MOSFET up to ratings of 1200V/100A. For IGBTs with higher ratings, ICPL3120 can be used to drive a discrete power stage which drives the IGBT gate. FEATURES • ±2.5A Maximum Peak Output Current • 35kV/μs Minimum Common Mode Rejection at VCM 1500V • Maximum Propagation Delay 500ns • Maximum Propagation Delay Difference 100ns • Wide Operating Voltage Range VCC 15 to 30 V • Maximum Supply Current ICC 3.5mA • Under Voltage Lock Out (UVLO) Protection with Hysteresis • Guaranteed Performance over Temperature Range - 40°C to +105°C • MSL 1 • Lead Free and RoHS Compliant • Safety Approvals Pending APPLICATIONS • IGBT/MOSFET Gate Drive • UPS • Inverters • AC Brushless and DC Motor Drives ORDER INFORMATION • Add G after PN for 10mm lead spacing • Add SM after PN for Surface Mount • Add SMT&R after PN for Surface Mount Tape & Reel ISOCOM COMPONENTS 2004 LTD Unit 25B, Park View Road West, Park View Industrial Estate Hartlepool, Cleveland, TS25 1PE, United Kingdom Tel : +44 (0)1429 863 609 Fax : +44 (0)1429 863 581 e-mail : sales@isocom.co.uk http://www.isocom.com ISOCOM COMPONENTS ASIA LTD Hong Kong Office, Block A, 8/F, Wah Hing Industrial mansion, 36 Tai Yau Street, San Po Kong, Kowloon, Hong Kong. Tel : +852 2995 9217 Fax : +852 8161 6292 e-mail : sales@isocom.com.hk A 0.1 μF bypass Capacitor must be connected between Pins 8 and 5. Input Forward Current 20mA Forward Current Rise / Fall Time 500ns Power dissipation 45mW Reverse Voltage 5V Forward Peak Current (Pulse Width ≤ 1μs, 300pps) 1A Output Peak Output Current (Exponential waveform, Pulse Width ≤ 0.3μs, f ≤ = 15kHz) ±2.5A Operating Frequency (Exponential waveform, IO(Peak) ≤ l2.5Al, Pulse Width ≤ 0.3μs) 50kHz Supply Voltage (VCC ‒ VEE) 0V to 35V Output Voltage 0V to VCC Power Dissipation 250mW Isolation Voltage 5000VRMS Total Power Dissipation 295mW Operating Temperature -40 to 105 °C Storage Temperature -55 to 125 °C Lead Soldering Temperature (10s) 260°C Total Package 1 NC 2 Anode 3 Cathode 4 NC 5 GND (VEE) 6 VO 7 VO 8 VCC ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Stresses exceeding the absolute maximum ratings can cause permanent damage to the device. Exposure to absolute maximum ratings for long periods of time can adversely affect reliability. |
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