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JCS4N65VE Datasheet(PDF) 4 Page - JILIN SINO-MICROELECTRONICS CO., LTD.

Part # JCS4N65VE
Description  Electronic ballast
Download  13 Pages
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Manufacturer  JSMC [JILIN SINO-MICROELECTRONICS CO., LTD.]
Direct Link  http://www.hwdz.com.cn
Logo JSMC - JILIN SINO-MICROELECTRONICS CO., LTD.

JCS4N65VE Datasheet(HTML) 4 Page - JILIN SINO-MICROELECTRONICS CO., LTD.

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JCS4N65E
版本:201607C
4/13
电特性 ELECTRICAL CHARACTERISTICS
开关特性 Switching Characteristics
延迟时间 Turn-On delay time
td(on)
VDD=325V,ID=4.0A,RG=25Ω
(note 4,5)
-
21
58
ns
上升时间 Turn-On rise time
tr
-
18
52
ns
延迟时间 Turn-Off delay time
td(off)
-
36
90
ns
下降时间 Turn-Off Fall time
tf
-
16
50
ns
栅极电荷总量 Total Gate Charge
Qg
VDS =520V ,
ID=4.0A
VGS =10V
(note 4,5)
-
11.9
20
nC
栅-源电荷 Gate-Source charge
Qgs
-
3.0
-
nC
栅-漏电荷 Gate-Drain charge
Qgd
-
5.2
-
nC
漏-源二极管特性及最大额定值 Drain-Source Diode Characteristics and Maximum Ratings
正向最大连续电流
Maximum Continuous Drain
-Source Diode Forward Current
IS
-
-
4
A
正向最大脉冲电流
Maximum Pulsed Drain-Source
Diode Forward Current
ISM
-
-
16
A
正向压降
Drain-Source Diode Forward
Voltage
VSD
VGS=0V,
IS=4.0A
-
-
1.4
V
反向恢复时间
Reverse recovery time
trr
VGS=0V, IS=4.0A
dIF/dt=100A/μs
(note 4)
-
288
-
ns
反向恢复电荷
Reverse recovery charge
Qrr
-
1.33
-
μC
热特性 THERMAL CHARACTERISTIC
Parameter
Symbol
最大 Max
单位
Unit
JCS4N65FE
(TO-220MF-K1/K2)
JCS4N65RE/VE
结到管壳的热阻
Thermal Resistance, Junction to Case
Rth(j-c)
3.12
0.71
℃/W
结到环境的热阻
Thermal Resistance, Junction to Ambient
Rth(j-A)
46.52
72.27
℃/W
注释:
1:脉冲宽度由最高结温限制
2:L=46mH, IAS=4.0A, VDD=50V,
RG=25 Ω,起始结
温 TJ=25℃
3:ISD ≤4.0A,di/dt ≤200A/μs,VDD≤BVDSS,起始结温
TJ=25℃
4:脉冲测试:脉冲宽度
≤300μs,占空比≤2%
5:基本与工作温度无关
Notes:
1:Pulse width limited by maximum junction
temperature
2 : L=46mH, IAS=4.0A, VDD=50V, RG=25 Ω,Starting
TJ=25℃
3 : ISD ≤4.0A,di/dt ≤200A/μs,VDD≤BVDSS, Starting
TJ=25℃
4:Pulse Test:
Pulse Width ≤300μs,Duty Cycle≤2%
5:Essentially independent of operating temperature


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