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BCW60 Datasheet(PDF) 1 Page - Zetex Semiconductors

Part No. BCW60
Description  SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS
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Maker  ZETEX [Zetex Semiconductors]
Homepage  http://www.diodes.com/
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BCW60 Datasheet(HTML) 1 Page - Zetex Semiconductors

   
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SOT23 NPN SILICON PLANAR
SMALL SIGNAL TRANSISTORS
ISSUE 2 – AUGUST 1995
PARTMARKING DETAILS
BCW60A – AA
BCW60AR – CR
BCW60B – AB
BCW60BR – DR
BCW60C – AC
BCW60CR – AR
BCW60D – AD
BCW60DR – BR
COMPLEMENTARY TYPE
BCW61
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
32
V
Collector-Emitter Voltage
VCEO
32
V
Emitter-Base Voltage
VEBO
5V
Continuous Collector Current
IC
200
mA
Base Current
IB
50
mA
Power Dissipation at Tamb=25°C
PTOT
330
mW
Operating and Storage Temperature Range
tj:tstg
-55 to +150
°C
FOUR TERMINAL NETWORK DATA (Ic=2mA, VCE=5V, f=1kHz)
hFEGroup A
hFEGroup B
hFEGroup C
hFEGroup D
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
h11e
1.6
2.7
4.5
2.5
3.6
6.0
3.2
4.5
8.5
4.5
7.5
12
kΩ
h12e
1.5
2
2
3
10-4
h21e
200
260
330
520
h22e
18
30
24
50
30
60
50
100
µ
S
SWITCHING CIRCUIT
BCW60
PAGE NO
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT CONDITIONS.
Collector-Emitter
Breakdown Voltage
V(BR)CEO
32
V
IC=2mA
Emitter-Base Breakdown
Voltage
V(BR)EBO
5V
IEBO=1µA
Collector-Emitter
Cut-off Current
ICES
20
20
nA
µ
A
VCES=32V
VCES=32V ,Tamb=150oC
Emitter-Base Cut-Off Current
IEBO
20
nA
VEBO=4V
Collector-Emitter Saturation
Voltage
VCE(sat)
0.12
0.20
0.35
0.55
V
V
IC=10mA, IB = 0.25mA
IC= 50mA, IB =1.25mA
Base-Emitter
Saturation Voltage
VBE(SAT)
0.60
0.70
0.70
0.83
0.85
1.05
V
V
IC=10mA, IB=0.25mA
IC =50mA, IB=1.25mA
Base - Emitter Voltage
VBE
0.55
0.52
0.65
0.78
0.75
V
V
V
IC=10µA, VCE=5V
IC=2mA, VCE=5V
IC=50mA, VCE=1V
Static BCW60A
Forward
Current
Transfer BCW60B
Ratio
BCW60C
BCW60D
hFE
120
50
78
170
220
IC=10µA, VCE=5V
IC=2mA, VCE=5V
IC=50mA, VCE=1V
20
180
70
145
250
310
IC=10µA, VCE=5V
IC=2mA, VCE=5V
IC=50mA, VCE=1V
40
250
90
220
350
460
IC=10µA, VCE=5V
IC=2mA, VCE=5V
IC=50mA, VCE=1V
100
380
100
300
500
630
IC=10µA, VCE=5V
IC=2mA, VCE=5V
IC=50mA, VCE=1V
Transition Frequency
fT
125
250
MHz
IC =10mA, VCE=5V
f = 100MHz
Emitter-Base Capacitance
Cebo
8pF
VEBO=0.5V, f =1MHz
Collector-Base Capacitance
Ccbo
4.5
pF
VCBO=10V, f =1MHz
Noise Figure
N
2
6
dB
IC= 0.2mA, VCE= 5V
RG =2KΩ, f=1KH
f=200Hz
Switching times:
Delay Time
Rise Time
Turn-on Time
Storage Time
Fall Time
Turn-Off Time
td
tr
ton
ts
tf
toff
35
50
85
400
80
480
150
800
ns
ns
ns
ns
ns
ns
IC:IB1:- IB2=10:1:1mA
R1=5KΩ, R2=5KΩ
VBB=3.6V, RL=990Ω
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
Spice parameter data is available upon request for this device
BCW60
C
B
E
SOT23
R1
R2
RL
50
VCC(+10V)
-VBB
+10V
tr < 5nsec
Zin ≥ 100k
Oscilloscope
1µsec
tr < 5nsec
Mark/Space ratio < 0.01
Zs=50


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