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AT29C256-12TI Datasheet(PDF) 1 Page - ATMEL Corporation |
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AT29C256-12TI Datasheet(HTML) 1 Page - ATMEL Corporation |
1 / 17 page 1 Features • Fast Read Access Time – 70 ns • 5-volt Only Reprogramming • Page Program Operation – Single Cycle Reprogram (Erase and Program) – Internal Address and Data Latches for 64 Bytes • Internal Program Control and Timer • Hardware and Software Data Protection • Fast Program Cycle Times – Page (64 Byte) Program Time – 10 ms – Chip Erase Time – 10 ms • DATA Polling for End of Program Detection • Low-power Dissipation – 50 mA Active Current –300 µA CMOS Standby Current • Typical Endurance > 10,000 Cycles • Single 5V ± 10% Supply • CMOS and TTL Compatible Inputs and Outputs • Commercial and Industrial Temperature Ranges Description The AT29C256 is a five-volt-only in-system Flash programmable and erasable read only memory (PEROM). Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 70 ns with power dissipation of just 275 mW. When the device is deselected, the CMOS standby current is less than 300 µA. The device endurance is such that any sector can typically be written to in excess of 10,000 times. 256K (32K x 8) 5-volt Only Flash Memory AT29C256 Rev. 0046P–FLASH–10/04 PLCC and LCC Top View Note: PLCC package pins 1 and 17 are DON’T CONNECT. Pin Configurations Pin Name Function A0 - A14 Addresses CE Chip Enable OE Output Enable WE Write Enable I/O0 - I/O7 Data Inputs/Outputs NC No Connect DC Don’t Connect 5 6 7 8 9 10 11 12 13 29 28 27 26 25 24 23 22 21 A6 A5 A4 A3 A2 A1 A0 NC I/O0 A8 A9 A11 NC OE A10 CE I/O7 I/O6 TSOP Top View Type 1 22 23 24 25 26 27 28 1 2 3 4 5 6 7 21 20 19 18 17 16 15 14 13 12 11 10 9 8 OE A11 A9 A8 A13 A14 VCC WE A12 A7 A6 A5 A4 A3 A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2 |
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