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AFM04P3-213 Datasheet(PDF) 1 Page - Alpha Industries

Part # AFM04P3-213
Description  Low Noise/Medium Power GaAs MESFET Chips
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Manufacturer  ALPHA [Alpha Industries]
Direct Link  http://www.alphaind.com
Logo ALPHA - Alpha Industries

AFM04P3-213 Datasheet(HTML) 1 Page - Alpha Industries

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Alpha Industries, Inc. [781] 935-5150
• Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com
1
Specifications subject to change without notice. 6/99A
Low Noise/Medium Power
GaAs MESFET Chips
Features
s Low Noise Figure, 0.6 dB @ 4 GHz
s 20 dBm Output Power @ 18 GHz
s High Associated Gain, 13 dB @ 4 GHz
s High Power Added Efficiency, 25%
s Broadband Operation, DC–26 GHz
s Available in Tape and Reel Packaging
Description
The AFM04P3-212, 213 are high performance power
GaAs MESFET chips having a gate length of 0.25
µm and
a total gate periphery of 400
µm. These devices have
excellent gain and power performance through 26 GHz,
making them suitable for a wide range of commercial and
military applications in oscillator and amplifier circuits. They
also have excellent noise performance and can be used
in the first and second stage of low noise amplifier design.
The AFM04P3 employs Ti/Pd/Au gate metallization and
surface passivation to ensure a rugged, reliable part.
AFM04P3-212, AFM04P3-213
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Saturated Drain Current (IDSS)
90.0
140.0
190.0
mA
Transconductance (gm)
VDS = 2 V, VGS = 0 V
60.0
80.0
mS
Pinch-Off Voltage (VP)VDS = 5 V, IDS = 1 mA
1.0
3.0
5.0
-V
Gate to Drain Breakdown
IGD = -400 µA
8.0
12.0
-V
Voltage (Vbgd)
Noise Figure (NF)
0.6
dB
Associated Gain (GA)
VDS = 2 V, IDS = 25 mA, F = 4 GHz
13.8
dB
Output Power at 1 dB
20.0
dBm
Compression (P1 dB)
Gain at 1 dB Compression (G1 dB)
VDS = 5 V, IDS = 70 mA, F = 18 GHz
9.0
dB
Power Added Efficiency (
ηadd)
25.0
%
Electrical Specifications at 25°C
Source
Gate
Source
Drain
Drain
Source
Gate
Source
212
213
Characteristic
Value
Drain to Source Voltage (VDS)
6 V
Gate to Source Voltage (VGS)
-4 V
Drain Current (IDS)
IDSS
Gate Current (IGS)
1 mA
Total Power Dissipation (PT)
700 mW
Storage Temperature (TST)
-65 to +150°C
Channel Temperature (TCH)
175°C
Absolute Maximum Ratings


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