XN0C301 datasheet(4/6 Pages) PANASONIC

Part #	XN0C301

Description	Silicon PNP epitaxial planer transistor (Tr1)

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Manufacturer	PANASONIC [Panasonic Semiconductor]

Direct Link	http://www.panasonic.com/industrial/

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4 / 6 page

4

Composite Transistors

XN0C301

fT — IE

Cob — VCB

NF — IE

h Parameter — IE

h Parameter — VCE

Characteristics charts of Tr2

IC — VCE

IB — VBE

IC — VBE

0

0.1

0.3

40

80

120

160

140

100

60

20

1

3

10

30

100

Emitter current IE (mA)

VCB=–10V

Ta=25˚C

0

–1

– 5

–20

–2

8

7

6

5

4

3

2

1

–3

–50

–10

–30

–100

Collector to base voltage VCB (V)

f=1MHz

IE=0

Ta=25˚C

0

0.01

0.03

6

5

4

3

2

1

0.1

0.3

1

3

10

Emitter current IE (mA)

VCB=–5V

f=1kHz

Rg=2k

Ω

Ta=25˚C

0

0.1

20

2

18

4

6

8

10

12

14

16

0.3

1

3

10

2

0.5

0.2

5

Emitter current IE (mA)

VCB=–5V

Rg=50k

Ω

Ta=25˚C

f=100Hz

10kHz

1kHz

1

0.1

2

3

5

10

20

30

50

100

200

300

0.3

1

3

10

2

0.5

0.2

5

Emitter current IE (mA)

VCE=–5V

f=270Hz

Ta=25˚C

hfe

hoe (

µS)

hie (k

Ω)

hre (

×10–4)

1

0.1

2

3

5

10

20

30

50

100

200

300

0.3

1

3

10

2

0.5

0.2

5

Collector to emitter voltage VCE (V)

IE=2mA

f=270Hz

Ta=25˚C

hfe

hoe (

µS)

hie (k

Ω)

hre (

×10–4)

0

010

24

8

6

60

50

40

30

20

10

Collector to emitter voltage VCE (V)

Ta=25˚C

IB=160

µA

140

µA

120

µA

100

µA

80

µA

60

µA

40

µA

20

µA

0

01.0

0.8

0.6

0.4

0.2

1200

1000

800

600

400

200

Base to emitter voltage VBE (V)

VCE=10V

Ta=25˚C

0

02.0

1.6

1.2

0.8

0.4

240

200

160

120

80

40

Base to emitter voltage VBE (V)

VCE=10V

Ta=75˚C

– 25˚C

25˚C

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XN0C301 Datasheet(PDF) 4 Page - Panasonic Semiconductor

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