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TPS2849 Datasheet(PDF) 7 Page - Texas Instruments |
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TPS2849 Datasheet(HTML) 7 Page - Texas Instruments |
7 / 20 page TPS2838, TPS2839 TPS2848, TPS2849 SLVS367A – MARCH 2001 – REVISED JUNE 2001 7 www.ti.com electrical characteristics over recommended operating virtual junction temperature range, VCC = 12 V, ENABLE = High, CL = 3.3 nF (unless otherwise noted) (continued) dead-time control PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VIH(LOWDR) LOWDR high-level input voltage Over full VDRV range See Note 2 50 %VDRV VIL(LOWDR) LOWDR low-level input voltage Over full VDRV range See Note 2 1 V VIH(DT) DT high-level input voltage Over full VCC range 2 V VIL(DT) DT low-level input voltage Over full VCC range 1 V Deadtime delay V(VDRV) = 4 V to 14 V See Note 2 0.5 1 1.5 ns/pF Dri er nono erlap time (DT to LOWDR) V(VDRV) = 4.5 V, TJ = 25°C, See Note 2 30 150 ns Driver nonoverlap time (DT to LOWDR) V(VDRV) = 14.5 V, TJ = 25°C, See Note 2 30 100 ns Driver nonoverlap time (LOWDR to V(VDRV) = 4.5 V, CL(Delay) = 50 pF TJ = 25°C, See Note 2 75 180 ns Driver nonoverla time (LOWDR to HIGHDR) V(VDRV) = 14.5 V, CL(Delay) = 50 pF TJ = 25°C, See Note 2 58 125 ns Driver nonoverlap time (LOWDR to V(VDRV) = 4.5 V, CL(Delay) = 0 pF TJ = 25°C, See Note 2 50 125 ns Driver nonoverla time (LOWDR to HIGHDR) V(VDRV) = 14.5 V, CL(Delay) = 0 pF TJ = 25°C, See Note 2 30 100 ns NOTE 2: Ensured by design, not production tested. high-side driver PARAMETER TEST CONDITIONS MIN TYP MAX UNIT V(BOOT) –V(BOOTLO) = 4 V, V(HIGHDR) = 0.5 V (src) 1 1.3 V(BOOT) V(BOOTLO) = 4 V, See Note 2 V(HIGHDR) = 4 V (sink) 2 2.4 Peak output current V(BOOT) –V(BOOTLO) = 8 V, V(HIGHDR) = 0.5 V (src) 2 2.4 A Peak output current V(BOOT) V(BOOTLO) = 8 V, See Note 2 V(HIGHDR) = 8 V (sink) 2 3.3 A V(BOOT) –V(BOOTLO) = 14 V, V(HIGHDR) = 0.5 V (src) 2 3.9 V(BOOT) V(BOOTLO) = 14 V, See Note 2 V(HIGHDR) = 14 V (sink) 2 4.4 V(BOOT) –V(BOOTLO) = 4.5 V V(HIGHDR) = 4 V (src) 45 V(BOOT) V(BOOTLO) = 4.5 V TJ = 25°C V(HIGHDR) = 0.5 V (sink) 6 r Output resistance V(BOOT) –V(BOOTLO) = 7.5 V, V(HIGHDR) = 7 V (src) 26 Ω ro Output resistance V(BOOT) V(BOOTLO) = 7.5 V, TJ = 25°C V(HIGHDR) = 0.5 V (sink) 5 Ω V(BOOT) –V(BOOTLO) = 11.5 V, V(HIGHDR) = 11 V (src) 20 V(BOOT) V(BOOTLO) = 11.5 V, TJ = 25°C V(HIGHDR) = 0.5 V (sink) 4 HIGHDRV-to-BOOTLO resistor 250 k Ω C 3 3 F V GND V(BOOT)= 4 V 85 CL = 3.3 nF, V(BOOTLO) = GND, TJ = 125°C V(BOOT)= 8 V 70 t/t Rise and fall time TJ = 125°C V(BOOT)= 14 V 65 ns tr/tf Rise and fall time (see Notes 2 and 3) C 10 F V GND V(BOOT)= 4 V 170 ns CL = 10 nF, V(BOOTLO) = GND, TJ = 125°C V(BOOT)= 8 V 140 TJ = 125°C V(BOOT)= 14 V 100 Propagation delay time, V GND T 125 °C V(BOOT) = 4 V 120 tPHL Propagation delay time, HIGHDR going low V(BOOTLO) = GND, TJ = 125°C, See Notes 2 and 3 V(BOOT)= 8 V 100 ns tPHL HIGHDR going low (excluding deadtime) See Notes 2 and 3 V(BOOT)= 14 V 80 ns NOTES: 2: Ensured by design, not production tested. 3. The pullup/pulldown circuits of the drivers are bipolar and MOSFET transistors in parallel. The peak output current rating is the combined current from the bipolar and MOSFET transistors. The output resistance is the rDS(on) of the MOSFET transistor when the voltage on the driver output is less than the saturation voltage of the bipolar transistor. |
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