NCE3008M datasheet(2/7 Pages) NCEPOWER

Part #	NCE3008M

Description	NCE N-Channel Enhancement Mode Power MOSFET

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Manufacturer	NCEPOWER [Wuxi NCE Power Semiconductor Co., Ltd]

Direct Link	http://www.ncepower.com

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Wuxi NCE Power Co., Ltd

Page

V1.0

2

NCE3008M

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Parameter

Symbol

Condition

Min

Typ

Max

Unit

Gate-Body Leakage Current

IGSS

VGS=±20V,VDS=0V

-

±100

nA

On Characteristics

(Note 3)

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=250μA

1.0

1.6

2.4

V

VGS=10V, ID=8A

-

19.8

22.5

mΩ

Drain-Source On-State Resistance

RDS(ON)

VGS=4.5V, ID=6A

-

27

31

mΩ

Dynamic Characteristics

(Note4)

Input Capacitance

Clss

-

564

-

PF

Output Capacitance

Coss

-

75

-

PF

Reverse Transfer Capacitance

Crss

VDS=15V,VGS=0V,

F=1.0MHz

-

66

-

PF

Switching Characteristics

(Note 4)

Turn-on Delay Time

td(on)

-

9

-

nS

Turn-on Rise Time

tr

-

10

-

nS

Turn-Off Delay Time

td(off)

-

15

-

nS

Turn-Off Fall Time

tf

VDD=30V,ID=1.5A

VGS=10V,RGEN=1Ω

-

5

-

nS

Total Gate Charge

Qg

-

14.2

-

nC

Gate-Source Charge

Qgs

-

1.5

-

nC

Gate-Drain Charge

Qgd

VDS=30V,ID=8A,

VGS=10V

-

3.6

-

nC

Drain-Source Diode Characteristics

Diode Forward Voltage

(Note 3)

VSD

VGS=0V,IS=8A

-

1.2

V

Diode Forward Current

(Note 2)

IS

-

8

A

Notes:

1.

Repetitive Rating: Pulse width limited by maximum junction temperature.

2.

Surface Mounted on FR4 Board, t ≤ 10 sec.

3.

Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4.

Guaranteed by design, not subject to production

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NCE3008M Datasheet(PDF) 2 Page - Wuxi NCE Power Semiconductor Co., Ltd

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