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TPS92610-Q1

SLDS233 – NOVEMBER 2017

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Copyright © 2017, Texas Instruments Incorporated

(1)

AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

6.2 ESD Ratings

TPS92610-Q1

VALUE

UNIT

Electrostatic discharge

Human-body model (HBM), per AEC

All pins

±2000

V

Charged-device model (CDM), per AEC

Q100-011

All pins

±500

Corner pins (1, 7, 8, and

14)

±750

6.3 Recommended Operating Conditions

over operating ambient temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

SUPPLY

Device supply voltage

4.5

40

V

IN

Sense voltage

4.4

40

V

PWM

PWM input

0

40

V

DIAGEN

Diagnostics enable pin

0

40

V

OUT

Driver output

0

40

V

SSH

Single LED short high-side reference

0

5

V

SSL

Single LED short low-side reference

0

5

V

EN

Device enable

0

40

V

FAULT

Fault bus

0

7

V

Operating ambient temperature

–40

125

°C

(1)

For more information about traditional and new thermal metrics, see Semiconductor and IC Package Thermal Metrics.

6.4 Thermal Information

TPS92610-Q1

UNIT

PWP (HTSSOP)

14 PINS

Junction-to-ambient thermal resistance

52.4

°C/W

Junction-to-case (top) thermal resistance

43.5

°C/W

Junction-to-board thermal resistance

22.0

°C/W

Junction-to-top characterization parameter

1.6

°C/W

Junction-to-board characterization parameter

22.3

°C/W

Junction-to-case (bottom) thermal resistance

6.5

°C/W

6.5 Electrical Characteristics

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

BIAS

Supply voltage POR rising

threshold

3.2

4

V

Supply voltage POR falling

threshold

2.2

3

V

Device shutdown current

EN = LOW

5

10

µA

Device quiescent current

PWM = HIGH, EN = HIGH

0.1

0.2

0.25

mA

Device current in fault mode

EN = HIGH, PWM = HIGH, FAULT

externally pulled LOW

0.1

0.2

0.25

mA