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SI4953ADY Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI4953ADY Datasheet(HTML) 2 Page - Vishay Siliconix |
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Si4953ADY Vishay Siliconix New Product www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 71091 S-015393—Rev. B, 17-Jul-00 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = –250 mA –1 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA Zero Gate Voltage Drain Current IDSS VDS = –30 V, VGS = 0 V –1 mA Zero Gate Voltage Drain Current IDSS VDS = –30 V, VGS = 0 V, TJ = 55_C –25 mA On-State Drain Currenta ID(on) VDS = –5 V, VGS = –10 V –30 A Drain-Source On-State Resistancea rDS(on) VGS = –10 V, ID = –4.9 A 0.045 0.053 W Drain-Source On-State Resistancea rDS(on) VGS = –4.5 V, ID = –3.7 A 0.075 0.090 W Forward Transconductancea gfs VDS = –10 V, ID = –4.9 A 9 S Diode Forward Voltagea VSD IS = –1.7 A, VGS = 0 V –0.8 –1.2 V Dynamicb Total Gate Charge Qg V15 V V 10 V I 4 9 A 15 25 C Gate-Source Charge Qgs VDS = –15 V, VGS = –10 V, ID = –4.9 A 4 nC Gate-Drain Charge Qgd 2 Turn-On Delay Time td(on) V15 V R 15 W 7 15 Rise Time tr VDD = –15 V, RL = 15 W I 1 A V 10 V R 6 W 10 20 Turn-Off Delay Time td(off) DD , L ID ^ –1 A, VGEN = –10 V, RG = 6 W 40 80 ns Fall Time tf 20 40 Source-Drain Reverse Recovery Time trr IF = –1.7 A, di/dt = 100 A/ms 30 60 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 6 12 18 24 30 0123456 0 6 12 18 24 30 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS = 10 thru 7 V TC = –55_C 125 _C 4 V 25 _C Output Characteristics Transfer Characteristics VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) 3 V 5 V 6 V |
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