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SI4953ADY Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. SI4953ADY
Description  Dual P-Channel 30-V (D-S) MOSFET
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI4953ADY Datasheet(HTML) 2 Page - Vishay Siliconix

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Si4953ADY
Vishay Siliconix
New Product
www.vishay.com
S FaxBack 408-970-5600
2-2
Document Number: 71091
S-015393—Rev. B, 17-Jul-00
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = –250 mA
–1
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
"100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = –30 V, VGS = 0 V
–1
mA
Zero Gate Voltage Drain Current
IDSS
VDS = –30 V, VGS = 0 V, TJ = 55_C
–25
mA
On-State Drain Currenta
ID(on)
VDS = –5 V, VGS = –10 V
–30
A
Drain-Source On-State Resistancea
rDS(on)
VGS = –10 V, ID = –4.9 A
0.045
0.053
W
Drain-Source On-State Resistancea
rDS(on)
VGS = –4.5 V, ID = –3.7 A
0.075
0.090
W
Forward Transconductancea
gfs
VDS = –10 V, ID = –4.9 A
9
S
Diode Forward Voltagea
VSD
IS = –1.7 A, VGS = 0 V
–0.8
–1.2
V
Dynamicb
Total Gate Charge
Qg
V15 V V
10 V I
4 9 A
15
25
C
Gate-Source Charge
Qgs
VDS = –15 V, VGS = –10 V, ID = –4.9 A
4
nC
Gate-Drain Charge
Qgd
2
Turn-On Delay Time
td(on)
V15 V R
15
W
7
15
Rise Time
tr
VDD = –15 V, RL = 15 W
I
1 A V
10 V R
6
W
10
20
Turn-Off Delay Time
td(off)
DD
,
L
ID ^ –1 A, VGEN = –10 V, RG = 6 W
40
80
ns
Fall Time
tf
20
40
Source-Drain Reverse Recovery Time
trr
IF = –1.7 A, di/dt = 100 A/ms
30
60
Notes
a.
Pulse test; pulse width
v 300 ms, duty cycle v 2%.
b.
Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
6
12
18
24
30
0123456
0
6
12
18
24
30
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VGS = 10 thru 7 V
TC = –55_C
125
_C
4 V
25
_C
Output Characteristics
Transfer Characteristics
VDS – Drain-to-Source Voltage (V)
VGS – Gate-to-Source Voltage (V)
3 V
5 V
6 V


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