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SI4953ADY Datasheet(PDF) 1 Page - Vishay Siliconix

Part No. SI4953ADY
Description  Dual P-Channel 30-V (D-S) MOSFET
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI4953ADY Datasheet(HTML) 1 Page - Vishay Siliconix

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Si4953ADY
Vishay Siliconix
New Product
Document Number: 71091
S-015393—Rev. B, 17-Jul-00
www.vishay.com
S FaxBack 408-970-5600
2-1
Dual P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
–30
0.053 @ VGS = –10 V
–4.9
–30
0.090 @ VGS = –4.5 V
–3.7
S1
D1
G1
D1
S2
D2
G2
D2
SO-8
5
6
7
8
Top View
2
3
4
1
S1
G1
D1 D1
P-Channel MOSFET
S2
G2
D2 D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
VDS
–30
V
Gate-Source Voltage
VGS
"20
V
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
ID
–4.9
–3.7
A
Continuous Drain Current (TJ = 150 C)a
TA = 70_C
ID
–3.9
–2.9
A
Pulsed Drain Current
IDM
–30
A
continuous Source Current (Diode Conduction)a
IS
–1.7
–0.9
Maximum Power Dissipationa
TA = 25_C
PD
2.0
1.1
W
Maximum Power Dissipationa
TA = 70_C
PD
1.3
0.7
W
Operating Junction and Storage Temperature Range
TJ, Tstg
–55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta
t
v 10 sec
RthJA
52
62.5
_C/W
Maximum Junction-to-Ambienta
Steady State
RthJA
90
110
_C/W
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
32
40
Notes
a.
Surface Mounted on 1 ” x 1” FR4 Board.


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