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SI4425BDY Datasheet(PDF) 4 Page - Vishay Siliconix |
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SI4425BDY Datasheet(HTML) 4 Page - Vishay Siliconix |
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4 / 6 page 
Si4425BDY Vishay Siliconix www.vishay.com 4 Document Number: 72000 S-50366—Rev. D, 28-Feb-05 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) VDS − Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified 0 30 10 20 Single Pulse Power, Junction-to-Ambient Time (sec) 10−3 10−2 1 10 600 10−1 10−4 100 −0.4 −0.2 0.0 0.2 0.4 0.6 0.8 −50 −25 0 25 50 75 100 125 150 ID = 250 mA 2 1 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Threshold Voltage TJ − Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 70_C/W 3. TJM − TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM 1 600 100 10−1 10−2 10 5 25 15 Safe Operating Area 100 1 0.1 1 10 100 0.01 10 TA = 25_C Single Pulse P(t) = 10 dc 0.1 IDM Limited ID(on) Limited *rDS(on) Limited BVDSS Limited P(t) = 1 P(t) = 0.1 P(t) = 0.01 P(t) = 0.001 P(t) = 0.0001 |
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