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SI4425BDY Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. SI4425BDY
Description  P-Channel 30-V (D-S) MOSFET
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI4425BDY Datasheet(HTML) 2 Page - Vishay Siliconix

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Si4425BDY
Vishay Siliconix
www.vishay.com
2
Document Number: 72000
S-50366—Rev. D, 28-Feb-05
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = −250 mA
−1.0
−3.0
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
"100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = −30 V, VGS = 0 V
−1
mA
Zero Gate Voltage Drain Current
IDSS
VDS = −30 V, VGS = 0 V, TJ = 55_C
−5
mA
On-State Drain Currenta
ID(on)
VDS v −5 V, VGS = −10 V
−50
A
Drain Source On State Resistancea
rDS( )
VGS = −10 V, ID = −11.4 A
0.010
0.012
W
Drain-Source On-State Resistancea
rDS(on)
VGS = −4.5 V, ID = −9.1 A
0.015
0.019
W
Forward Transconductancea
gfs
VDS = −15 V, ID = −11.4 A
29
S
Diode Forward Voltagea
VSD
IS = −2.5 A, VGS = 0 V
−0.8
−1.2
V
Dynamicb
Total Gate Charge
Qg
64
100
Gate-Source Charge
Qgs
VDS = −15 V, VGS = −10 V, ID = −11.4 A
11
nC
Gate-Drain Charge
Qgd
DS
, GS
, D
17
Turn-On Delay Time
td(on)
15
25
Rise Time
tr
VDD = −15 V, RL = 15 W
13
20
Turn-Off Delay Time
td(off)
VDD = −15 V, RL = 15 W
ID ^ −1 A, VGEN = −10 V, RG = 6 W
100
150
ns
Fall Time
tf
53
80
ns
Source-Drain Reverse Recovery Time
trr
IF = −2.5 A, di/dt = 100 A/ms
41
80
Notes
a.
Pulse test; pulse width v 300 ms, duty cycle v 2%.
b.
Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
10
20
30
40
50
0
1234
5
0
10
20
30
40
50
0
1234
5
VGS = 10 thru 5 V
TC = 125_C
−55_C
25_C
Output Characteristics
Transfer Characteristics
VDS − Drain-to-Source Voltage (V)
VGS − Gate-to-Source Voltage (V)
4 V
3 V


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