MITSUBISHI SEMICONDUCTOR <Intelligent Power Module>

PS21352-N

TRANSFER-MOLD TYPE

INSULATED TYPE

Sep. 2001

400

–20~+100

–40~+125

1500

°C, non-repetitive, less than 2 µs

(Note 2)

60Hz, Sinusoidal, 1 minute, connection

pins to heat-sink plate

V

V

V

V

mA

V

20

20

15

Control supply voltage

Control supply voltage

Input voltage

Fault output supply voltage

Fault output current

Current sensing input voltage

450

500

600

5

10

20

–20~+150

Applied between P-N

Applied between P-N

°C

°C, instantaneous value (pulse)

°C, per 1 chip

(Note 1)

Condition

Symbol

Parameter

Ratings

Unit

Supply voltage

Supply voltage (surge)

Collector-emitter voltage

Each IGBT collector current

Each IGBT collector current (peak)

Collector dissipation

Junction temperature

V

V

V

A

A

W

°C

°C, unless otherwise noted)

INVERTER PART

Condition

Symbol

Parameter

Ratings

Unit

CONTROL (PROTECTION) PART

Symbol

Ratings

Unit

Self protection supply voltage limit

(short-circuit protection capability)

Heat-fin operation temperature

Storage temperature

Isolation voltage

V

°C

°C

TOTAL SYSTEM

Note 1 : The maximum junction temperature rating of the power chips integrated within the DIP-IPM is 150

Parameter

Condition

P

U

V

W

N

C

Control Terminals

FWD Chip

Al Board

Temp. measurement point

(inside the Al board)

16mm

18mm

IGBT Chip

Power Terminals

Temp. measurement

point

(inside the Al board)

Groove

Al Board Specifications:

Dimensions 100

× 100 × 10mm, finishing: 12s, warp: –50~100µm

100~200

µm of evenly applied Silicon-Grease

IGBT/FWD Chip