PMR400UN datasheet(2/12 Pages) PHILIPS

Part #	PMR400UN

Description	N-channel mTrenchMOS ultra low level FET

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Manufacturer	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

PMR400UN

N-channel

µTrenchMOS™ ultra low level FET

Product data

Rev. 01 — 3 March 2004

2 of 12

9397 750 12665

4.

Limiting values

Table 3:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

Max

Unit

VDS

drain-source voltage (DC)

25

°C ≤ T

j ≤ 150 °C

-

30

V

VDGR

drain-gate voltage (DC)

25

°C ≤ T

j ≤ 150 °C; RGS =20kΩ

-30

V

VGS

gate-source voltage (DC)

-

±8V

ID

drain current (DC)

Tsp =25 °C; VGS = 4.5 V; Figure 2 and 3

-

0.8

A

Tsp = 100 °C; VGS = 4.5 V; Figure 2

-

0.51

A

IDM

peak drain current

Tsp =25 °C; pulsed; tp ≤ 10 µs; Figure 3

-

1.61

A

Ptot

total power dissipation

Tsp =25 °C; Figure 1

-

0.53

W

Tstg

storage temperature

−55

+150

°C

Tj

junction temperature

−55

+150

°C

Source-drain diode

IS

source (diode forward) current (DC)

Tsp =25 °C

-

0.44

A

ISM

peak source (diode forward) current Tsp =25 °C; pulsed; tp ≤ 10 µs

-

0.88

A

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