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MTB030N10RV8-0-T6-G Datasheet(PDF) 2 Page - Cystech Electonics Corp. |
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MTB030N10RV8-0-T6-G Datasheet(HTML) 2 Page - Cystech Electonics Corp. |
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2 / 9 page  CYStech Electronics Corp. Spec. No. : C053V8 Issued Date : 2017.10.20 Revised Date : Page No. : 2/9 MTB030N10RV8 CYStek Product Specification Absolute Maximum Ratings (Ta=25 °C, unless otherwise specified) Parameter Symbol Limits Unit Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ± 20 V Continuous Drain Current @ VGS=10V, TC=25 °C 16.5 Continuous Drain Current @ VGS=10V, TC=100 °C ID 10.4 Continuous Drain Current @ VGS=10V, TA=25 °C 5.7 Continuous Drain Current @ VGS=10V, TA=70 °C IDSM 4.6 Pulsed Drain Current IDM 66 *1 Avalanche Current @ L=0.1mH IAS 28 A Avalanche Energy @ L=1mH, ID=16A, VDD=25V EAS 128 mJ TC=25℃ 21 TC=100℃ PD 8.4 TA=25℃ 2.5 *2 Total Power Dissipation TA=70℃ PDSM 1.6 *2 W Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 °C Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max RθJC 6 Thermal Resistance, Junction-to-ambient, max RθJA 50 *2 °C/W Note : 1. Pulse width limited by maximum junction temperature. 2. Surface mounted on a 1 in² pad of 2oz copper, t≤10s. In practice RθJA will be determined by customer’s PCB characteristics. 125°C/W when mounted on a minimum pad of 2 oz. copper. 3. 100% tested by conditions of L=0.1mH, IAS=17A, VGS=10V, VDD=25V Characteristics (TC=25 °C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 100 - - VGS=0V, ID=250μA VGS(th) 1 - 2.5 V VDS = VGS, ID=250μA GFS *1 - 11.9 - S VDS =10V, ID=5A IGSS - - ± 100 nA VGS=±20V, VDS=0V - - 1 VDS =80V, VGS =0V IDSS - - 5 μA VDS =80V, VGS =0V, Tj=55 °C - 27.4 38 VGS =10V, ID=20A RDS(ON) *1 - 33.1 45 mΩ VGS =4.5V, ID=20A Dynamic Ciss - 1703 - Coss - 100 - Crss - 7 - pF VDS=50V, VGS=0V, f=1MHz Qg *1, 2 - 27.8 42 Qgs *1, 2 - 6.3 - Qgd *1, 2 - 3.7 - nC VDS=50V, VGS=10V, ID=20A |
Similar Part No. - MTB030N10RV8-0-T6-G |
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