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LMK60E2-150M, LMK60E0-156257

LMK60A0-148351, LMK60A0-148M

SNAS687C – JUNE 2016 – REVISED NOVEMBER 2017

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Product Folder Links: LMK60E2-150M LMK60E0-156257 LMK60A0-148351 LMK60A0-148M

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6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

VDD

Device supply voltage

3.135

3.3

3.465

V

Ambient temperature

–40

25

85

°C

Junction temperature

120

°C

VDD power-up ramp time

0.1

100

ms

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

(2)

The package thermal resistance is calculated on a 4 layer JEDEC board.

(3)

Connected to GND with 3 thermal vias (0.3-mm diameter).

(4)

ψJB (junction to board) is used when the main heat flow is from the junction to the GND pad. See the Layout Guidelines section for

more information on ensuring good system reliability and quality.

6.4 Thermal Information

UNIT

SIA (QFM)

6 PINS

Airflow (LFM) 0

Airflow (LFM) 200

Airflow (LFM) 400

Junction-to-ambient thermal resistance

55.2

46.4

43.7

°C/W

34.6

n/a

n/a

°C/W

Junction-to-board thermal resistance

37.7

n/a

n/a

°C/W

Junction-to-top characterization parameter

11.3

17.6

22.5

°C/W

Junction-to-board characterization parameter

37.7

41.5

40.1

°C/W

n/a

n/a

n/a

°C/W

(1)

Refer to Parameter Measurement Information for relevant test conditions.

(2)

On-chip power dissipation should exclude 40 mW, dissipated in the 150 Ω termination resistors, from total power dissipation.

6.5 Electrical Characteristics - Power Supply

(1)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

IDD

Device current consumption

162

208

mA

LVDS

152

196

HCSL

155

196

IDD-PD

Device current consumption

when output is disabled

OE = GND

136

mA

(1)

Refer to Parameter Measurement Information for relevant test conditions.

(2)

(3)

Ensured by characterization.

6.6 LVPECL Output Characteristics

(1)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

10

800

MHz

(2)

700

800

1200

mV

Differential output peak-to-peak swing

V

Output common-mode voltage

VDD – 1.55

V

150

250

ps

ODC

45%

55%