NTB75N03L09 datasheet(3/8 Pages) ONSEMI

Part #	NTB75N03L09

Description	Power MOSFET

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Manufacturer	ONSEMI [ON Semiconductor]

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NTP75N03L09, NTB75N03L09

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain − Source Breakdown Voltage (Note 2)

(VGS = 0 Vdc, ID = 250 mAdc)

Temperature Coefficient (Negative)

V(BR)DSS

30

34

−57

−

Vdc

mV

°C

Zero Gate Voltage Drain Current

(VDS = 30 Vdc, VGS = 0 Vdc)

(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 150°C)

IDSS

−

1.0

10

mAdc

Gate−Body Leakage Current

(VGS = ±20 Vdc, VDS = 0 Vdc)

IGSS

−

±100

nAdc

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage (Note 2)

(VDS = VGS, ID = 250 mAdc)

Threshold Temperature Coefficient (Negative)

VGS(th)

1.0

−

1.6

−6

2.0

−

Vdc

mV

°C

Static Drain−to−Source On−Resistance (Note 2)

(VGS = 5.0 Vdc, ID = 37.5 Adc)

RDS(on)

−

6.5

8.0

m

W

Static Drain−to−Source On Resistance (Note 2)

(VGS = 10 Vdc, ID = 75 Adc)

(VGS = 10 Vdc, ID = 37.5 Adc, TJ = 125°C)

VDS(on)

−

0.52

0.35

0.68

0.50

Vdc

Forward Transconductance (Notes 2 & 4)

(VDS = 3 Vdc, ID = 20 Adc)

gFS

−

58

−

m

W

DYNAMIC CHARACTERISTICS (Note 4)

Input Capacitance

(V

25 Vdc V

0

Ciss

−

4398

5635

pF

Output Capacitance

(VDS = 25 Vdc, VGS = 0,

f = 1.0 MHz)

Coss

−

1160

1894

Transfer Capacitance

f

1.0 MHz)

Crss

−

317

430

SWITCHING CHARACTERISTICS (Notes 3 & 4)

Turn−On Delay Time

(V

5 0 Vdc

td(on)

−

16

30

ns

Rise Time

(VGS = 5.0 Vdc,

VDD = 20 Vdc, ID = 75 Adc,

)(

)

tr

−

130

200

Turn−Off Delay Time

VDD

20 Vdc, ID

75 Adc,

RG = 4.7 W) (Note 2)

td(off)

−

65

110

Fall Time

tf

−

105

175

Gate Charge

(VGS = 5.0 Vdc,

I

75 Adc

QT

−

57

75

nC

ID = 75 Adc,

VDS = 24 Vdc) (Note 2)

Q1

−

11

15

VDS

24 Vdc) (Note 2)

Q2

−

34

50

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage

(IS = 75 Adc, VGS = 0 Vdc)

(IS = 75 Adc, VGS = 0 Vdc, TJ = 125°C)

(Note 2)

VSD

−

1.19

1.09

1.25

−

Vdc

Reverse Recovery Time

(Note 4)

(I

75 Adc V

0 Vdc

trr

−

37

−

ns

(Note 4)

(IS = 75 Adc, VGS = 0 Vdc

dlS/dt = 100 A/ms) (Note 2)

ta

−

20

−

Reverse Recovery Stored

Charge (Note 4)

dlS/dt

100 A/

ms) (Note 2)

tb

−

17

−

mC

Charge (Note 4)

QRR

−

0.023

−

2. Pulse Test: Pulse Width

v 300 mS, Duty Cycle v 2%.

3. Switching characteristics are independent of operating junction temperatures.

4. From characterization test data.

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