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NTMD6N03R2 Datasheet(PDF) 3 Page - ON Semiconductor

Part No. NTMD6N03R2
Description  Power MOSFET
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NTMD6N03R2 Datasheet(HTML) 3 Page - ON Semiconductor

  NTMD6N03R2 Datasheet HTML 1Page - ON Semiconductor NTMD6N03R2 Datasheet HTML 2Page - ON Semiconductor NTMD6N03R2 Datasheet HTML 3Page - ON Semiconductor NTMD6N03R2 Datasheet HTML 4Page - ON Semiconductor NTMD6N03R2 Datasheet HTML 5Page - ON Semiconductor NTMD6N03R2 Datasheet HTML 6Page - ON Semiconductor NTMD6N03R2 Datasheet HTML 7Page - ON Semiconductor NTMD6N03R2 Datasheet HTML 8Page - ON Semiconductor  
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NTMD6N03R2
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3
TYPICAL MOSFET ELECTRICAL CHARACTERISTICS
1.8
1.6
0.8
1.2
0.6
100
10
10,000
0
10
2
4
0.4
0.2
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
1
0.04
0.03
0.025
7
6
5
0.02
0.015
0.01
28
Figure 3. On−Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
ID, DRAIN CURRENT (AMPS)
Figure 5. On−Resistance Variation with
Temperature
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
−50
0
−25
50
25
04
2
15
015
20
10
30
5
2
6
8
VDS ≥ 10 V
TJ = 25°C
TJ = −55°C
TJ = 125°C
150
ID = 3 A
VGS = 10 V
12
0.045
0.05
VGS = 2.6 V
VGS = 10
1
1.2
1.4
1.8
10
4
0
2
6
8
12
1
0.04
0.035
0.03
6
5
4
0.02
0.015
0.01
312
0.045
0.05
1000
TJ = 25°C
TJ = 25°C
0.8
0.6
1.6
10 V
6 V
4 V
3.6 V
3.4 V
3.8 V
3.2 V
3 V
2.8 V
3
34
10
911
12
0.035
T = 125
°C
T = −55
°C
T = 25
°C
211
10
9
8
7
0.025
VGS = 4.5 V
VGS = 10 V
1
100
75
125
1.4
25
VGS = 0 V
TJ = 150°C
TJ = 125°C


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