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NTMD6N03R2 Datasheet(PDF) 2 Page - ON Semiconductor

Part No. NTMD6N03R2
Description  Power MOSFET
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NTMD6N03R2 Datasheet(HTML) 2 Page - ON Semiconductor

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NTMD6N03R2
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µA)
Temperature Coefficient (Positive)
V(BR)DSS
30
30
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 24 Vdc, VGS = 0 Vdc, TJ = 25°C)
(VDS = 24 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
1.0
20
µAdc
Gate−Body Leakage Current
(VGS = ±20 Vdc, VDS = 0 Vdc)
IGSS
100
nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Temperature Coefficient (Negative)
VGS(th)
1.0
1.8
4.6
2.5
Vdc
mV/
°C
Static Drain−to−Source On−State Resistance
(VGS = 10 Vdc, ID = 6 Adc)
(VGS = 4.5 Vdc, ID = 3.9 Adc)
RDS(on)
0.024
0.030
0.032
0.040
Forward Transconductance
(VDS = 15 Vdc, ID = 5.0 Adc)
gFS
10
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
24 Vd
V
0Vd
Ciss
680
950
pF
Output Capacitance
(VDS = 24 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
210
300
Reverse Transfer Capacitance
f = 1.0 MHz)
Crss
70
135
SWITCHING CHARACTERISTICS (Notes 3 & 4)
Turn−On Delay Time
td(on)
9
18
ns
Rise Time
(VDD = 15 Vdc, ID = 1 A,
VGS =10V
tr
22
40
Turn−Off Delay Time
VGS = 10 V,
RG = 6 Ω)
td(off)
45
80
Fall Time
RG
6
Ω)
tf
45
80
Turn−On Delay Time
td(on)
13
30
ns
Rise Time
(VDD = 15 Vdc, ID = 1 A,
VGS =45V
tr
27
50
Turn−Off Delay Time
VGS = 4.5 V,
RG = 6 Ω)
td(off)
22
40
Fall Time
RG
6
Ω)
tf
34
70
Gate Charge
QT
19
30
nC
(VDS = 15 Vdc,
VGS =10Vdc
Q1
2.4
VGS = 10 Vdc,
ID = 5 A)
Q2
5.0
ID
5 A)
Q3
4.3
BODY−DRAIN DIODE RATINGS (Note 3)
Diode Forward On−Voltage
(IS = 1.7 Adc, VGS = 0 V)
(IS = 1.7 Adc, VGS = 0 V, TJ = 150°C)
VSD
0.75
0.62
1.0
Vdc
Reverse Recovery Time
(I
5A V
0V
trr
26
ns
(IS = 5 A, VGS = 0 V,
dIS/dt = 100 A/µs)
ta
11
dIS/dt = 100 A/µs)
tb
15
Reverse Recovery Stored Charge
(IS = 5 A, dIS/dt = 100 A/ms, VGS = 0 V)
QRR
0.015
µC
3. Pulse Test: Pulse Width
≤ 300 µs, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperature.


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