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NTE1888 Datasheet(PDF) 2 Page - NTE Electronics

Part No. NTE1888
Description  Integrated Circuit Horizontal and Vertical Deflection Monitor
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Maker  NTE [NTE Electronics]
Homepage  http://www.nteinc.com
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NTE1888 Datasheet(HTML) 2 Page - NTE Electronics

   
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FFP
MFP
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Reference Voltage
V15
@ Pin15
I15 = –1µA
1.4
1.75
2.0
V
Minimum Width of Frame Pulse
(when synchronized with TTL
signal)
MWF
50
µs
Low Threshold Voltage
LT9
@ Pin9
2.8
3.2
3.6
V
High Threshold Voltage
HT9
6.4
6.6
7.8
V
Bias Current
BI9
100
nA
Discharge Impedance
DR9
1.0
1.4
1.8
k
Free Running Line Period
FLP1
R = 34.9k
Ω to Vcc1,
C = 2.2nF to GND
62
64
66
µs
FLP2
R = 13.7k
Ω, C = 2.2nF
27
µs
Oscilator Threshold for Line Output
Pulse Triggering
OT9
4.6
V
Horizontal Frequency Drift
w/Temperature
DF
∆Θ
2
Hz/
°C
Saturation Voltage
LV14
@ Pin14
I14 = 200mA
1.1
1.6
V
Output Pulse Width
OPW
Line Period = 64
µs
20
22
24
µs
Bias Voltage
V11
@ Pin11
1.8
2.4
3.2
V
Input Impedance
Z11
4.5
5.8
8.0
k
Output Current During Synchro
Pulse
I10
@ Pin10
250
450
800
µA
Current Ratio
RI10
Positive/Negative
0.95
1.0
1.05
Leakage Current
LI10
–2
+2
µA
Control Range Voltage
CV10
2.6
7.1
V
Low Threshold Voltage
LT1
@ Pin1
1.6
2.0
2.3
V
High Threshold Voltage
HT1
2.6
3.1
3.6
V
Bias Current
BI1
30
nA
Discharge Impedance
DR1
300
470
700
W
Free Running Frame Period
FFP1
@ Pin1
R = 845k
Ω to Vcc1,
C = 180nF to GND
20.5
23.0
25.0
ms
Minimum Frame Period
MFP
I15 = –100µA,
R = 845k
Ω to Vcc1,
C = 180nF to GND
12.8
ms
Free Running Frame Period
FFP2
R = 408k
Ω, C = 220nF
14.3
ms
Frame Period Ratio
FPR
Note 1
1.7
1.8
1.9
Frame Sawtooth Gain
FG
Between Pin1 and
Non–Inverting input of
the Frame Amplifier
–0.4
Vertical Frequency Drift
w/Temperature
DF
∆Θ
@ Pin1
4.1–3
Hz/
°C
Operating Voltage
V7
@ Pin7
w/Flyback Generator
10
58
V
Note 1. Frame Period Ratio =


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