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BCR25A Datasheet(PDF) 4 Page - Mitsubishi Electric Semiconductor

Part # BCR25A
Description  MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

BCR25A Datasheet(HTML) 4 Page - Mitsubishi Electric Semiconductor

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Feb.1999
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
(BCR25B)
RMS ON-STATE CURRENT (A)
160
120
100
60
20
0
32
0
416
24
28
40
80
140
812
20
100 100 t3.0
120 120 t3.0
160 160 t4.0
NATURAL CONVECTION
ALL FINS ARE BLACK PAINTED
ALUMINUM AND GREASED
WITHOUT
MICA PLATE
WITH GREASE
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
COMMUTATION CHARACTERISTICS
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A /ms)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
GATE CURRENT PULSE WIDTH (µs)
102
23
100
57 101 23 5 7 102 23 5 7 103
3
2
103
7
5
3
2
7
5
7
5
3
2
101
IRGT III
IRGT I
IFGT I
tw
0.1s
6V
6
Ω
A
TYPICAL
EXAMPLE
Tj = 25°C
160
120
100
60
20
0
160
0
20
80
120 140
40
80
140
40
60
100
TYPICAL EXAMPLE
I QUADRANT
III QUADRANT
101
23
101
57 102 23 5 7 103 23 5 7 104
3
2
102
7
5
3
2
7
5
7
5
3
2
100
I QUADRANT
III QUADRANT
VOLTAGE WAVEFORM
CURRENT WAVEFORM
VD
t
(dv/dt)C
IT
τ
t
(di/dt)C
TYPICAL
EXAMPLE
Tj = 125°C
IT = 4A,
τ = 500µs
VD = 200V, f = 3Hz
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR25A, BCR25B
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
6
Ω
6
Ω
6
Ω
6V
6V
6V
RG
RG
RG
A
V
A
V
A
V
TEST PROCEDURE 1
TEST PROCEDURE 3
TEST PROCEDURE 2
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS


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