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P40F12SN Datasheet(PDF) 2 Page - Shindengen Electric Mfg.Co.Ltd |
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P40F12SN Datasheet(HTML) 2 Page - Shindengen Electric Mfg.Co.Ltd |
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2 / 4 page  ０ １００ ６０ ８０ ４０ ２０ 全損失減少率 −ケース温度 ０ ２５ ５０ ７５ １２５ １５０ １００ Case Temperature Tc〔℃〕 単発アバランシェエネルギー減少率−チャネル温度 １００ ０ ８０ ６０ ４０ ２０ ０ ５０ １００ １５０ Starting Channel Temperature Tch〔℃〕 Power Derating - Case Temperature 過渡熱抵抗 TC=２５℃ TYP VGS=１０V ８V 出力特性 Drain・Source Voltage VDS〔V〕 ０ ８０ ６０ ７０ ２０ ４０ ５０ ３０ １０ ８０ ６０ ７０ ２０ ４０ ５０ ３０ １０ ０ ０.２ ０.４ ０.６ ０.８ １ Pulse measurement ６V ５V Typical Output Characteristics Pulse measurement VDS=１０V TYP Ｔｃ=１５０℃ Ｔｃ= −５５℃ Ｔｃ=２５℃ Ｔｃ=１００℃ 伝達特性 Gate・Source Voltage VGS〔V〕 ０１ ２ ４ ３７ ８ ５ ６ Transfer Characteristics ０ ドレイン・ソース間オン抵抗−ドレイン電流 Static Drain-Source On-state Resistance vs Drain Current Drain Current ID〔A〕 １ １００ 1０ １ １０ ８０ Pulse measurement VGS＝10V Tc＝２５℃ TYP ドレイン・ソース間オン抵抗−ケース温度 Case Ｔemperature Tc〔℃〕 １ １０ １００ Pulse measurement −５５ ０ １００ １５０ ５０ VGS＝10V TYP ID=２０A Static Drain-Source On-state Resistance vs Case Temperature ゲートしきい値電圧−ケース温度 Case Ｔemperature Tc〔℃〕 Pulse measurement −５５ ０ １００ １５０ ５０ VDS＝１０V ID=１mA TYP ４.５ ４ ３.５ ３ ２.５ ２ １.５ １ Gate Threshold Voltage vs Case Temperature 安全動作領域 Safe Operating Area Drain・Source Voltage VDS〔V〕 RDS（ON）Limited （at VGS=10V） Power Dissipation Limited Tc＝２５℃ Single Pulse 10ms 1ms 100μs 10μs DC １０ ５００ １６０ １２０ ８０ ４０ ０． ０１ １ ０． １ １０ ０． １ １ １2０ Time t〔s〕 １０-５ １０-４ １０-3 １０-2 １０-1 １０0 １０2 １０3 １０1 Transient Thermal Impedance ０.0１ ０.０0１ ０.１ １００ 1 １０ θja θj c キャパシタンス特性 Capacitance Characteristics Drain・Source Voltage VDS〔Ｖ〕 Ｃｉｓｓ Ｃｉｓｓ Ｃｉｓｓ Ｃoｓｓ Ｃoｓｓ Ｃoｓｓ Ｃrｓｓ Ｃrｓｓ Ｃrｓｓ Tc＝２５℃ f＝１MHz TYP VVDS DS VDS ０ ２０ ゲートチャージ特性 ０ ６０ ８０ １２０ １００ ４０ ２０ ０ １００ ５０ １５０ ２００ ID=４０A TYP Total Gate Charge Qg〔nC〕 VＧS VDD=９６Ｖ ４８Ｖ Gate Charge Characteristics １０ Single Avalanche Energy Derating vs Channel Temperature Alumina Substrate 37.5×37.5×3mm １００００ １０００ １０ １００ ０ ４０ １２０ １００ ２０ ６０ ８０ |
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