K6F1016U4C-EF55 datasheet(4/9 Pages) SAMSUNG

Part #	K6F1016U4C-EF55

Description	64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

Download	9 Pages

Scroll/Zoom	100%

Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

Logo

4 / 9 page

Revision 2.0

CMOS SRAM

September 2003

K6F1016U4C Family

- 4 -

DC AND OPERATING CHARACTERISTICS

1. Typical values are measured at VCC=3.0V, TA=25

°C and not 100% tested.

Item

Symbol

Test Conditions

Min

Typ1) Max

Unit

Input leakage current

ILI

VIN=Vss to Vcc

-1

-

1

µA

Output leakage current

ILO

CS=VIH or OE=VIH or WE=VIL or LB=UB=VIH, VIO=Vss to Vcc

-1

-

1

µA

Average operating current

ICC1

Cycle time=1

µs, 100%duty, IIO=0mA, CS≤0.2V,

LB

≤0.2V or/and UB≤0.2V, VIN≤0.2V or VIN≥VCC-0.2V

-

2

mA

ICC2

Cycle time=Min, IIO=0mA, 100% duty, CS=VIL, LB=VIL or/

and UB=VIL, VIN=VIL or VIH

70ns

-

20

mA

55ns

-

26

Output low voltage

VOL

IOL=2.1mA

-

0.4

V

Output high voltage

VOH

IOH =-1.0mA

2.4

-

V

Standby Current (CMOS)

ISB1

Other input = VSS to Vcc

1) CS

≥Vcc-0.2V(CS controlled) or

2) LB=UB

≥Vcc-0.2V, CS≤0.2V(LB/UB controlled)

-

0.5

5

µA

RECOMMENDED DC OPERATING CONDITIONS1)

Note:

1. TA=-40 to 85

°C, otherwise specified.

2. Overshoot: Vcc+2.0V in case of pulse width

≤20ns.

3. Undershoot: -2.0V in case of pulse width

≤20ns.

4. Overshoot and undershoot are sampled, not 100% tested.

Item

Symbol

Min

Typ

Max

Unit

Supply voltage

Vcc

2.7

3.0

3.3

V

Ground

Vss

0

V

Input high voltage

VIH

2.2

-

Vcc+0.22)

V

Input low voltage

VIL

-0.23)

-

0.6

V

CAPACITANCE1)(f=1MHz, TA=25

°C)

1. Capacitance is sampled, not 100% tested

Item

Symbol

Test Condition

Min

Max

Unit

Input capacitance

CIN

VIN=0V

-

8

pF

Input/Output capacitance

CIO

VIO=0V

-

10

pF

Similar Part No. - K6F1016U4C-EF55

Manufacturer	Part #	Datasheet	Description
Samsung semiconductor	K6F1016U4B	162Kb / 9P	64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
	K6F1016U4B-F	162Kb / 9P	64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
	K6F1016U4B-FF55	162Kb / 9P	64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
	K6F1016U4B-FF70	162Kb / 9P	64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

More results

Similar Description - K6F1016U4C-EF55

Manufacturer	Part #	Datasheet	Description
Emerging Memory & Logic...	EM610FV16	75Kb / 11P	64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Samsung semiconductor	K6F1016U4B	162Kb / 9P	64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Emerging Memory & Logic...	EM611FV16U	188Kb / 11P	64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Emerging Memory & Logic...	EM611FV16	72Kb / 11P	64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Samsung semiconductor	K6F1616T6B	199Kb / 10P	1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Emerging Memory & Logic...	EM621FU16	72Kb / 11P	128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Samsung semiconductor	K6F3216U6M	150Kb / 9P	2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
	K6F8016V3A	146Kb / 9P	512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
	K6F4016R4E	119Kb / 9P	256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
	DS_K6F8016U6B	157Kb / 9P	512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

More results

K6F1016U4C-EF55 Datasheet(PDF) 4 Page - Samsung semiconductor

K6F1016U4C-EF55 Datasheet(HTML) 4 Page - Samsung semiconductor

Similar Part No. - K6F1016U4C-EF55

Similar Description - K6F1016U4C-EF55

Html Pages

1 2 3 4 5 6 7 8 9

Datasheet Download

Link URL