GLT41016 datasheet(1/23 Pages) ETC

Part #	GLT41016

Description	64K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT

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G -LINK

GLT41016

64K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT

Dec 1998 (Rev 2.1)

G-Link Technology Corporation

2701Northwestern Parkway

Santa Clara, CA 95051, U.S.A.

G-Link Technology Corporation, Taiwan

2F, No.12, R&D Rd. II, Science-Based Industrial Park,

Hsin Chu, Taiwan, R.O.C.

- 1 -

Features :

Description :

∗

65,536 words by 16 bits organization.

∗

Fast access time and cycle time.

∗

Dual CAS Input.

∗

Low power dissipation.

∗

Read-Modify-Write, RAS -Only Refresh,

CAS -Before- RAS Refresh, Hidden

Refresh and Test Mode Capability.

∗

256 refresh cycles per 4ms.

∗

Available in 40-pin 400 mil SOJ and 40/44

pin TSOP (II).

∗

Single 5.0V

±10% Power Supply.

∗

All inputs and Outputs are TTL

compatible.

∗

Extended Data-Out(EDO) Page Mode

operation.

The GLT41016 is a 65,536 x 16 bit high-

performance CMOS dynamic random access

memory. The GLT41016 offers Fast Page

mode with Extended Data Output, and has

both BYTE WRITE and WORD WRITE

access cycles via two

CAS

pins. The

GLT41016 accepts 256-cycle refresh in 4ms

interval.

All inputs are TTL compatible. EDO

Page Mode operation allows random access

up to 256 x 16 bits, within a page, with cycle

times as short as 12ns.

The

GLT41016

is

best

suited

for

graphics, and DSP applications requiring

high performance memories.

HIGH PERFORMANCE

30

35

40

45

Max. RAS Access Time, (tRAC)

30 ns

35 ns

40 ns

45 ns

Max. Column Address Access Time, (tAA)

15 ns

18 ns

20 ns

22 ns

Min. Extended Data Out Page Mode Cycle Time, (tPC)

12 ns

13 ns

15 ns

18 ns

Min. Read/Write Cycle Time, (tRC)

65 ns

70 ns

75 ns

80 ns

Max. CAS Access Time (tCAC)

10 ns

11 ns

12 ns

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