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FDB8896 Datasheet(PDF) 5 Page - Fairchild Semiconductor |
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FDB8896 Datasheet(HTML) 5 Page - Fairchild Semiconductor |
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5 / 11 page  ©2004 Fairchild Semiconductor Corporation FDB8896 Rev. B1 Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature Figure 13. Capacitance vs Drain to Source Voltage Figure 14. Gate Charge Waveforms for Constant Gate Current Typical Characteristics T C = 25°C unless otherwise noted 0.4 0.6 0.8 1.0 1.2 -80 -40 0 40 80 120 160 200 VGS = VDS, ID = 250µA TJ, JUNCTION TEMPERATURE ( oC) 0.9 1.0 1.1 1.2 -80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE ( oC) ID = 250µA 100 1000 0.1 1 10 30 5000 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = 0V, f = 1MHz CISS = CGS + CGD COSS ≅ CDS + CGD CRSS = CGD 0 2 4 6 8 10 0 10 203040 50 Qg, GATE CHARGE (nC) VDD = 15V ID = 35A ID = 16A WAVEFORMS IN DESCENDING ORDER: |
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