DTC144EET1G datasheet(3/10 Pages) ONSEMI

Part #	DTC144EET1G

Description	Bias Resistor Transistor

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Manufacturer	ONSEMI [ON Semiconductor]

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DTC114EET1 Series

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Base Cutoff Current (VCB = 50 V, IE = 0)

ICBO

−

100

nAdc

Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0)

ICEO

−

500

nAdc

Emitter−Base Cutoff Current

DTC114EET1

(VEB = 6.0 V, IC = 0)

DTC124EET1

DTC144EET1

DTC114YET1

DTC114TET1

DTC143TET1

DTC123EET1

DTC143EET1

DTC143ZET1

DTC124XET1

DTC123JET1

DTC115EET1

DTC144WET1

IEBO

−

0.5

0.2

0.1

0.2

0.9

1.9

2.3

1.5

0.18

0.13

0.2

0.05

0.13

mAdc

Collector−Base Breakdown Voltage (IC = 10 mA, IE = 0)

V(BR)CBO

50

−

Vdc

Collector−Emitter Breakdown Voltage (Note 3)

(IC = 2.0 mA, IB = 0)

V(BR)CEO

50

−

Vdc

ON CHARACTERISTICS (Note 3)

DC Current Gain

DTC114EET1

(VCE = 10 V, IC = 5.0 mA)

DTC124EET1

DTC144EET1

DTC114YET1

DTC114TET1

DTC143TET1

DTC123EET1

DTC143EET1

DTC143ZET1

DTC124XET1

DTC123JET1

DTC115EET1

DTC144WET1

hFE

35

60

80

160

8.0

15

80

60

100

140

350

15

30

200

150

140

150

140

−

Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)

(IC = 10 mA, IB = 5 mA) DTC123EET1

(IC = 10 mA, IB = 1 mA) DTC143TET1/DTC114TET1/

DTC143EET1/DTC143ZET1/DTC124XET1

VCE(sat)

−

0.25

Vdc

Output Voltage (on)

(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)

DTC114EET1

DTC124EET1

DTC114YET1

DTC114TET1

DTC143TET1

DTC123EET1

DTC143EET1

DTC143ZET1

DTC124XET1

DTC123JET1

(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW)

DTC144EET1

(VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW)

DTC115EET1

(VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW)

DTC144WET1

VOL

−

0.2

Vdc

Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)

(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW)

DTC143TET1

DTC143ZET1

DTC114TET1

VOH

4.9

−

Vdc

3. Pulse Test: Pulse Width < 300

ms, Duty Cycle < 2.0%

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