DB4 datasheet(2/2 Pages) LUGUANG

Part #	DB4

Description	Silicon Bidirectional Diacs

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Manufacturer	LUGUANG [Shenzhen Luguang Electronic Technology Co., Ltd]

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1.04

25

1.00

50

1.02

1.06

1.08

100

75

125

VBO(T

J)

VBO(T

J=25

)

TJ(

)

10KΩ

500KΩ

D.U.T

220V

60Hz

0.1

µ F

Vo

R=20Ω

90%

10%

IP

tr

f=100Hz

TJ initial=25℃

ITRM(A)

10

100

10000

1000

0.01

0.1

1

2

tp(

µ s)

FIG.6--PEAK PULSEE CURRENT VERENT VERSUS

PULSE DURATION(MAXIMUM VALUES)

FIG.1--VOLTAGE-CURRENT CHARACTERISTIC CURVE

FIG.2--TEST CIRCUIT FOR OUTPUT VOLTAGE

FIG.3-- TEST CIRCUIT SEE FIG.2 ADJUST R FOR IP=0.5A

FIG.4--POWER DISSIPATION VERSUS AMBIENT

TEMPERATURE (MAXIMUM VALUES)

FIG.5--RELATIVE VARIATION OF VBO VERSUS JUNCTION

TEMPERATURE(TYPICAL VALUES)

+IF

-IF

-V

+V

10mA

IBO

IB

0.5VBO

Ｖ

VBO

0

10

20

30

40 50

60

70

80

90

100 110 120 130

20

40

60

80

100

120

140

160

P(mW)

Tamb( ℃　)

Ratings and Characteristic Curves

DB3/DB4

Silicon Bidirectional Diacs

ht

t

p

:

//

www.lgesemi.com

mail:lge@lgesemi.com

Revision:201

70701-P1

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