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CY7C1347F-200BGC Datasheet(PDF) 10 Page - Cypress Semiconductor

Part # CY7C1347F-200BGC
Description  4-Mbit (128K x 36) Pipelined Sync SRAM
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY7C1347F-200BGC Datasheet(HTML) 10 Page - Cypress Semiconductor

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CY7C1347F
Document #: 38-05213 Rev. *D
Page 10 of 19
Switching Characteristics Over the Operating Range[15, 16]
Parameter
Description
-250
-225
-200
-166
-133
Unit
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
tPOWER
VDD(min.) to the first access
read or write [11]
1
1
11
1
ms
tCYC
Clock Cycle Time
4.0
4.4
5.0
6.0
7.5
ns
tCH
Clock HIGH
1.7
2.0
2.0
2.5
3.0
ns
tCL
Clock LOW
1.7
2.0
2.0
2.5
3.0
ns
tAS
Address Set-up Before CLK
Rise
0.8
1.2
1.2
1.5
1.5
ns
tAH
Address Hold After CLK Rise
0.4
0.5
0.5
0.5
0.5
ns
tCO
Data Output Valid After CLK
Rise
2.6
2.6
2.8
3.5
4.0
ns
tDOH
Data Output Hold After CLK
Rise
1.0
1.0
1.0
2.0
2.0
ns
tWES
GW, BWS[3:0] Set-up Before
CLK Rise
0.8
1.2
1.2
1.5
1.5
ns
tWEH
GW, BWS[3:0] Hold After CLK
Rise
0.4
0.5
0.5
0.5
0.5
ns
tALS
ADV/LD Set-up Before CLK
Rise
0.8
1.2
1.2
1.5
1.5
ns
tALH
ADV/LD Hold after CLK Rise
0.4
0.5
0.5
0.5
0.5
ns
tDS
Data Input Set-up Before CLK
Rise
0.8
1.2
1.2
1.5
1.5
ns
tDH
Data Input Hold After CLK
Rise
0.4
0.5
0.5
0.5
0.5
ns
tCES
Chip Enable Set-up Before
CLK Rise
0.8
1.2
1.2
1.5
1.5
ns
tCEH
Chip Enable Hold After CLK
Rise
0.4
0.5
0.5
0.5
0.5
ns
tCHZ
Clock to High-Z[12, 13, 14]
2.6
2.6
2.8
3.5
4.0
ns
tCLZ
Clock to Low-Z[12, 13, 14]
0
0
0
0
0
ns
tEOHZ
OE HIGH to Output
High-Z[12, 13, 14]
2.6
2.6
2.8
3.5
4.0
ns
tEOLZ
OE LOW to Output
Low-Z[12, 13, 14]
0
0
0
0
0
ns
tEOV
OE LOW to Output Valid
2.6
2.6
2.8
3.5
4.5
ns
Notes:
11. This part has a voltage regulator internally; tPOWER is the time that the power needs to be supplied above VDD(minimum) initially before a read or write operation
can be initiated.
12. tCHZ, tCLZ,tOELZ, and tOEHZ are specified with AC test conditions shown in part (b) of AC Test Loads. Transition is measured ± 200 mV from steady-state voltage.
13. At any given voltage and temperature, tOEHZ is less than tOELZ and tCHZ is less than tCLZ to eliminate bus contention between SRAMs when sharing the same
data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed
to achieve High-Z prior to Low-Z under the same system conditions.
14. This parameter is sampled and not 100% tested.
15. Timing references level is 1.5V when VDDQ = 3.3V and is 1.25V when VDDQ = 2.5V on all data sheets.
16. Test conditions shown in (a) of AC Test Loads unless otherwise noted.


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