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NTE1840 Datasheet(PDF) 1 Page - NTE Electronics

Part No. NTE1840
Description  Integrated Circuit Hybrid Switching Voltage Regulator
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Maker  NTE [NTE Electronics]
Homepage  http://www.nteinc.com
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NTE1840 Datasheet(HTML) 1 Page - NTE Electronics

   
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NTE1840 & NTE1841
Integrated Circuit
Hybrid Switching Voltage Regulator
Features:
D Triple Diffused Transistor Chips Incorporated
D Compact Plastic Package with Industry Standard Reliability
D Output Voltage is Pre–Fixed – No External Adjustment is Required
Absolute Maximum Ratings:
Peak Input Voltage, VIN
550V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input Current, IIN
Continuous
6A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulse
12A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation (TC = +100°C), PD
27W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Power Transistor Junction Temperature, TJ
+150
°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range (TC), Topr
–20
° to +125°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg
–30
° to +125°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TA = +25°C unles otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Output Voltage
VO
VIN = 120V, IO = 900mA
114.5
116.0
117.5
V
Detecting Voltage (Fixed Output)
NTE1840
VO
Iin = 7mA
41.3
41.8
42.3
V
NTE1841
42.5
43.0
43.5
V
Load Regulation
RegLOAD VIN = 120V, IO = 500mA to 900mA
Initial Value
±1
V
Output Voltage Temperature
Coefficient
TC = –20° to +100°C, Iin = 7mA
±2
mV/
°C
Saturation Voltage
VCE(sat) IC = 2A, IB = 400mA
1.0
V
VBE(sat)
IC = 2A, IB = 400mA
1.5
V
DC Current Gain
hFE
IC = 1A, VCE = 4V
10
40
Collector Cutoff Current
ICEX
VCE = 550V, VBE = –1.5V
1.0
mA
Power Transistor Thermal
Resistance
RthJC
Between Junction and Stem
Upper Surface
1.8
°C/W
Switching Time
ts
IC = 2A, IB1 = 300mA, IB2 = 300mA,
12
µs
tf
RL = 50Ω
7
µs
Note 1. Recommended Case Temperature: Topr = +100°C.


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