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BSN254 Datasheet(PDF) 2 Page - NXP Semiconductors

Part No. BSN254
Description  N-channel enhancement mode vertical D-MOS transistor
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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BSN254 Datasheet(HTML) 2 Page - NXP Semiconductors

 
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2002 Feb 19
2
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSN254; BSN254A
FEATURES
• Direct interface to C-MOS, TTL, etc.
• High-speed switching
• No secondary breakdown
• Low RDSon.
APPLICATIONS
• Line current interruptor in telephone sets
• Relay, high-speed and line transformer drivers.
DESCRIPTION
N-channel enhancement mode vertical D-MOS transistor
in a SOT54 (TO-92) variant package.
PINNING - SOT54 variant
PIN
DESCRIPTION
BSN254
BSN254A
1
gate
source
2
drain
gate
3
source
drain
handbook, halfpage
1
3
2
MAM146
s
d
g
Fig.1 Simplified outline and symbol.
note: various pinnings are available on request
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a printed-circuit board; maximum lead length 4 mm; mounting pad for drain lead minimum
10
× 10 mm.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VDS
drain-source voltage (DC)
250
V
ID
drain current (DC)
310
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
1W
RDSon
drain-source on-state resistance ID = 300 mA; VGS = 10 V
2.8
5
VGSth
gate-source threshold voltage
ID = 1 mA; VDS =VGS
2V
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage (DC)
250
V
VGSO
gate-source voltage (DC)
open drain
−±20
V
ID
drain current (DC)
310
mA
IDM
peak drain current
1.25
A
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
1W
Tstg
storage temperature
−55
+150
°C
Tj
junction temperature
150
°C


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