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T1070P-SD-F Datasheet(PDF) 1 Page - Vishay Siliconix |
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T1070P-SD-F Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 4 page T1070P www.vishay.com Vishay Semiconductors Rev. 1.7, 29-Sep-14 1 Document Number: 81119 For technical questions, contact: optochipsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Silicon NPN Phototransistor DESCRIPTION T1070P ambient light sensor chip is a silicon NPN epitaxial planar phototransistor. It is sensitive to visible light much like the human eye and has peak sensitivity at 570 nm. FEATURES • Package type: chip • Package form: single chip • Dimensions (L x W x H in mm): 0.72 x 0.72 x 0.22 • Wafer diameter (in mm): 100 • Radiant sensitive area (in mm2): 0.25 • High photo sensitivity • Suitable for visible light • Fast response times • Angle of half sensitivity: ϕ = ± 60° • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Ambient light sensor • Backlight dimmer GENERAL INFORMATION The datasheet is based on Vishay optoelectronics sample testing under certain predetermined and assumed conditions, and is provided for illustration purpose only. Customers are encouraged to perform testing in actual proposed packaged and used conditions. Vishay optoelectronics die products are tested using Vishay optoelectronics based quality assurance procedures and are manufactured using Vishay optoelectronics established processes. Estimates such as those described and set forth in this datasheet for semiconductor die will vary depending on a number of packaging, handling, use, and other factors. Therefore sold die may not perform on an equivalent basis to standard package products. Note • Test condition see table “Basic Characteristics” Note • MOQ: minimum order quantity 21682 B E PRODUCT SUMMARY COMPONENT IPCE (μA) ϕ (deg) λ0.5 (nm) T1070P 50 ± 60 440 to 800 ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM T1070P-SD-F wafer sawn on foil with disco frame MOQ: 55 000 pcs chip ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Collector emitter voltage VCEO 6V Emitter collector voltage VECO 1.5 V Collector current IC 20 mA Junction temperature Tj 100 °C Operating temperature range Tamb -40 to +100 °C Storage temperature range Tstg1 -40 to +100 °C Storage temperature range on foil Tstg2 -40 to +50 °C |
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