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T1070P-SD-F Datasheet(PDF) 1 Page - Vishay Siliconix

Part # T1070P-SD-F
Description  Silicon NPN Phototransistor
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

T1070P-SD-F Datasheet(HTML) 1 Page - Vishay Siliconix

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T1070P
www.vishay.com
Vishay Semiconductors
Rev. 1.7, 29-Sep-14
1
Document Number: 81119
For technical questions, contact: optochipsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Silicon NPN Phototransistor
DESCRIPTION
T1070P ambient light sensor chip is a silicon NPN epitaxial
planar phototransistor. It is sensitive to visible light much like
the human eye and has peak sensitivity at 570 nm.
FEATURES
• Package type: chip
• Package form: single chip
• Dimensions (L x W x H in mm): 0.72 x 0.72 x 0.22
• Wafer diameter (in mm): 100
• Radiant sensitive area (in mm2): 0.25
• High photo sensitivity
• Suitable for visible light
• Fast response times
• Angle of half sensitivity:
ϕ = ± 60°
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Ambient light sensor
• Backlight dimmer
GENERAL INFORMATION
The datasheet is based on Vishay optoelectronics sample testing under certain predetermined and assumed conditions, and is
provided for illustration purpose only. Customers are encouraged to perform testing in actual proposed packaged and used
conditions. Vishay optoelectronics die products are tested using Vishay optoelectronics based quality assurance procedures
and are manufactured using Vishay optoelectronics established processes. Estimates such as those described and set forth in
this datasheet for semiconductor die will vary depending on a number of packaging, handling, use, and other factors. Therefore
sold die may not perform on an equivalent basis to standard package products.
Note
• Test condition see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
21682
B
E
PRODUCT SUMMARY
COMPONENT
IPCE (μA)
ϕ (deg)
λ0.5 (nm)
T1070P
50
± 60
440 to 800
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
T1070P-SD-F
wafer sawn on foil with disco frame
MOQ: 55 000 pcs
chip
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Collector emitter voltage
VCEO
6V
Emitter collector voltage
VECO
1.5
V
Collector current
IC
20
mA
Junction temperature
Tj
100
°C
Operating temperature range
Tamb
-40 to +100
°C
Storage temperature range
Tstg1
-40 to +100
°C
Storage temperature range on foil
Tstg2
-40 to +50
°C


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